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DMN3051L-7 DMN3051L-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source breakdown voltage, 5.8A continuous drain current, and low on-resistance of 38mΩ at 10V gate drive.
Mfr Part #:

DMN3051L-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN3051L-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source breakdown voltage, 5.8A continuous drain current, and low on-resistance of 38mΩ at 10V gate drive.
✓ Total Stock: 6,493 pcs

DMN3051L-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 24+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,493 pcs
On Request
1493 pcs On Request 1 On Request On Request 1331+ On Request On Request
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DMN3051L-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
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DMN3051L-7 Description

Short technical summary and product information.

The DMN3051L-7 is an N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A at 25°C ambient temperature. The device features a low on-resistance of 38mΩ maximum at VGS = 10V and 64mΩ maximum at VGS = 4.5V, enabling efficient switching and reduced power losses.

 

This MOSFET is housed in a surface-mount SOT-23-3 package, making it suitable for compact designs. It supports a gate-source voltage range of ±20V and has a gate threshold voltage of 2.2V maximum at ID = 250µA. The device is RoHS3 compliant, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020.

 

Typical applications include load switches, DC-DC converters, and general power management functions. The device is supplied in tape and reel packaging with 3000 pieces per reel.

DMN3051L-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN3051L-7 N-Channel Enhancement Mode MOSFET 30V 5.8A SOT-23-3
Subcategory: Single MOSFET

DMN3051L-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

DMN3051L-7 Features

  • N-Channel enhancement mode MOSFET design.
  • 30V drain-source breakdown voltage rating.
  • 5.8A continuous drain current capability.
  • Low on-resistance of 38mΩ at 10V.
  • Surface mount SOT-23-3 package.

DMN3051L-7 Applications

  • Ideal for load switch applications.
  • Used in DC-DC converter circuits.
  • Suitable for power management functions.
  • Designed for high efficiency switching.

DMN3051L-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN3051L-7?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.8A at TA = 25°C (t < 5s) and 4.5A at TA = 25°C (steady state).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 38mΩ at VGS = 10V and ID = 5.8A, and 64mΩ at VGS = 4.5V and ID = 4.5A.

What package is the DMN3051L-7 available in?

It is available in a surface mount SOT-23-3 package.

Is the DMN3051L-7 RoHS compliant?

Yes, it is RoHS3 compliant per EU Directive 2011/65/EU and 2015/863/EU.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

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