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DMN3033LSD-13 This is a dual N-channel MOSFET from Diodes Incorporated. It features 30V drain-source voltage, 6.9A continuous drain current, and 20mOhm on-resistance at 10V gate drive.
Mfr Part #:

DMN3033LSD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
This is a dual N-channel MOSFET from Diodes Incorporated. It features 30V drain-source voltage, 6.9A continuous drain current, and 20mOhm on-resistance at 10V gate drive.
✓ Total Stock: 41,020 pcs

DMN3033LSD-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
41,020 pcs
On Request
41020 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN3033LSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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DMN3033LSD-13 Description

Short technical summary and product information.

The DMN3033LSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated designed for high efficiency power management. It offers a low on-resistance of 20mOhm maximum at 10V gate drive, enabling minimal conduction losses. The device features a logic level gate threshold voltage of 2.1V max, allowing direct interface with low-voltage logic circuits. With a maximum continuous drain current of 6.9A at 25°C and a power dissipation of 2W, it is suitable for a variety of power switching applications. The MOSFET is housed in a compact SO-8 package (8-SOIC) with surface mount terminals, making it ideal for space-constrained designs. It is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability. Typical applications include backlighting, power management functions, and DC-DC converters. The device offers low gate charge (13nC) and input capacitance (725pF) for fast switching performance.

DMN3033LSD-13 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel MOSFET, 30V, 6.9A, 20mOhm, SO-8
Subcategory: Dual N-Channel MOSFET

DMN3033LSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3033LSD-13 Features

  • Dual N-channel MOSFET in SO-8 package.
  • Low 20mOhm on-resistance at 10V gate drive.
  • Logic level gate threshold for low voltage drive.
  • RoHS compliant and AEC-Q101 qualified.
  • Halogen and antimony free green device.

DMN3033LSD-13 Applications

  • Ideal for backlighting power management circuits.
  • Used in DC-DC converter applications.
  • Suitable for high efficiency power switching.
  • Great for low voltage motor control.

DMN3033LSD-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is 30V.

What package is this MOSFET available in?

It is available in an SO-8 package (8-SOIC).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 20mOhm at Vgs=10V, Id=6.9A.

Is this MOSFET AEC-Q101 qualified?

Yes, the datasheet states it is qualified to AEC-Q101 standards.

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