| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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269 pcs
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269 pcs | On Request | 1 | On Request | On Request | 1604/1601 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3032LFDBQ-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and power management applications. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 6.2A at 25°C ambient. The on-resistance is typically 30mOhm at VGS=10V and 42mOhm at VGS=4.5V, minimizing conduction losses. The device is housed in a compact 6-UDFN exposed pad package (U-DFN2020-6 Type B) for surface mount assembly, with a low profile suitable for space-constrained designs. It is qualified to AEC-Q101 standards, 100% unclamped inductive switching tested, and features low gate charge (10.6nC) for efficient switching. The part is RoHS3 compliant, lead-free, halogen and antimony free, and has an MSL of Level 1 per J-STD-020. Operating junction temperature range is -55°C to 150°C.
30V minimum.
6.2A at TA=+25°C with VGS=10V.
30mOhm maximum at VGS=10V, ID=5.8A.
6-UDFN Exposed Pad (U-DFN2020-6 Type B).
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant and lead-free.
MSL Level 1 per J-STD-020.