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DMN3032LFDBQ-13 Dual N-Channel enhancement mode MOSFET, 30V drain-source voltage, 6.2A continuous drain current, low on-resistance of 30mΩ at 10V. AEC-Q101 qualified for automotive applications.
Mfr Part #:

DMN3032LFDBQ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel enhancement mode MOSFET, 30V drain-source voltage, 6.2A continuous drain current, low on-resistance of 30mΩ at 10V. AEC-Q101 qualified for automotive applications.
Total Stock: 1,847 pcs

DMN3032LFDBQ-13 Available from 1 distributor

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1,847 pcs
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DMN3032LFDBQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Case Material
Configuration
Continuous Drain Current (Maximum @ TA = +75 °C, VGS = 10 V)
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Maximum Continuous Body Diode Forward Current
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Technology
Terminals Finish
Termination Style
UL Flammability Classification
Vgs(th) (Max) @ Id
Weight
continuous_drain_current (Maximum @ TA=+25 °C, VGS=-10 V)
drain_source_on_resistance (Maximum @ VGS=4.5 V)

DMN3032LFDBQ-13 Description

Short technical summary and product information.

The DMN3032LFDBQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and power management applications. It offers a maximum drain-source voltage of 30V and continuous drain current of 6.2A at 25°C. The device features low on-resistance of 30mΩ at 10V gate drive and 42mΩ at 4.5V, minimizing power losses. Gate charge is 10.6nC, enabling efficient switching.

 

This MOSFET is qualified to AEC-Q101 standards, ensuring high reliability for automotive body control electronics, DC-DC converters, and power management functions. It is 100% tested for unclamped inductive switching, enhancing robustness.

 

The device is housed in a compact U-DFN2020-6 surface mount package with exposed pad for improved thermal performance. It is RoHS3 compliant, lead-free, halogen-free, and has a moisture sensitivity level of 1. Operating temperature range is -55°C to 150°C.

DMN3032LFDBQ-13 Quick Information

Product Type: MOSFET Array
Series: DMN3032LFDBQ
Canonical Name: DMN3032LFDBQ-13 Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

DMN3032LFDBQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN3032LFDBQ-13 Features

  • Dual N-channel MOSFET in U-DFN2020-6 package.
  • Low on-resistance of 30mΩ at 10V gate drive.
  • AEC-Q101 qualified for automotive reliability.
  • Operating temperature range from -55°C to 150°C.
  • RoHS3 compliant and halogen-free.

DMN3032LFDBQ-13 Applications

  • Ideal for automotive body control electronics.
  • Used in DC-DC converter power stages.
  • Suitable for power management functions in compact designs.
  • Applicable for load switching in battery-powered systems.

DMN3032LFDBQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3032LFDBQ-13?

30V.

What is the package type of the DMN3032LFDBQ-13?

U-DFN2020-6 (6-UDFN exposed pad).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN3032LFDBQ-13 RoHS compliant?

Yes, RoHS3 compliant, totally lead-free and halogen-free.

What is the maximum continuous drain current?

6.2A at 25°C with Vgs=10V.

What is the on-resistance at 4.5V gate drive?

42mΩ maximum.

Is the DMN3032LFDBQ-13 qualified for automotive applications?

Yes, it is AEC-Q101 qualified.

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