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DMN3032LFDB-7 The DMN3032LFDB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 6.2A continuous drain current, and low on-resistance of 30mOhm at 10V.
Mfr Part #:

DMN3032LFDB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN3032LFDB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 6.2A continuous drain current, and low on-resistance of 30mOhm at 10V.
✓ Total Stock: 90,000 pcs

DMN3032LFDB-7 Available from 1 distributor

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90,000 pcs
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90000 pcs On Request 1 On Request On Request 18+ On Request On Request
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DMN3032LFDB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight
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DMN3032LFDB-7 Description

Short technical summary and product information.

The DMN3032LFDB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It combines two independent N-channel MOSFETs in a compact U-DFN2020-6 package, minimizing board space while providing superior switching performance.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a maximum continuous drain current of 6.2A at +25°C, and a low maximum on-resistance of 30mOhm at Vgs = 10V and Id = 5.8A. The device also features a maximum gate charge of 10.6nC at Vgs = 10V and an input capacitance of 500pF at Vds = 15V, enabling fast switching speeds.

 

The MOSFET is housed in a surface-mount U-DFN2020-6 (Type B) package with an exposed pad for improved thermal performance. It is rated for a maximum power dissipation of 1W and operates over a junction temperature range of -55°C to +150°C. The device is fully RoHS compliant, lead-free, and halogen and antimony free.

DMN3032LFDB-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN3032LFDB-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel Enhancement Mode MOSFET

DMN3032LFDB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3032LFDB-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • 30V drain-to-source voltage rating.
  • 6.2A continuous drain current at +25°C.
  • Low on-resistance of 30mOhm at 10V.
  • Surface-mount U-DFN2020-6 package.

DMN3032LFDB-7 Applications

  • Ideal for DC-DC converter circuits.
  • Suitable for power management functions.
  • Used in body control electronics.
  • Designed for high-efficiency power switching.

DMN3032LFDB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the DMN3032LFDB-7?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current (Id) is 6.2A at TA = +25°C.

What is the on-resistance of the DMN3032LFDB-7?

The maximum on-resistance is 30mOhm at Vgs = 10V and Id = 5.8A, and 42mOhm at Vgs = 4.5V.

What package does the DMN3032LFDB-7 come in?

It comes in a surface-mount U-DFN2020-6 (Type B) package with an exposed pad.

What is the operating temperature range of this device?

The operating junction temperature range is -55°C to +150°C.

Is the DMN3032LFDB-7 RoHS compliant?

Yes, it is fully RoHS3 compliant, lead-free, and halogen and antimony free.

What is the gate charge of the DMN3032LFDB-7?

The maximum gate charge (Qg) is 10.6nC at Vgs = 10V.

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