| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,000 pcs
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51000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN3032LE-13 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It offers a maximum drain-source voltage of 30V and continuous drain current ratings of 5.6A at 25°C ambient and 15.4A at 25°C case temperature. The device features low on-resistance: 29mΩ maximum at VGS=10V and 35mΩ maximum at VGS=4.5V, enabling high efficiency in power management circuits.
Electrical characteristics include a low input capacitance of 498pF at VDS=15V and a typical gate charge of 11.3nC, contributing to fast switching speeds. The gate threshold voltage is a maximum of 2V at ID=250µA, and the gate-source voltage range is ±20V. The device also includes a body diode with a maximum continuous forward current of 1.5A.
Packaged in a surface mount SOT223 (TO-261-4, TO-261AA) case, the DMN3032LE-13 is suitable for automated assembly. It is MSL Level 1 per J-STD-020, with a maximum power dissipation of 1.8W at 25°C ambient and 14W at 25°C case temperature. The operating junction temperature range is -55°C to +150°C.
Typical applications include DC motor control, DC-AC inverters, and other high-efficiency power management systems. The device is fully RoHS compliant, lead-free, and halogen-free, and qualified to AEC-Q101 standards for automotive reliability.
30 V
SOT223 (TO-261-4, TO-261AA)
-55°C to +150°C (junction)
Yes, RoHS compliant and lead-free.
5.6 A at 25°C ambient; 15.4 A at 25°C case temperature
29 mΩ maximum at VGS=10V, ID=3.2A