DMN3032LE-13 This N-Channel enhancement mode MOSFET from Diodes Incorporated features low on-resistance (29mΩ at 10V) and fast switching. It is designed for high efficiency power management applications.
Mfr Part #:

DMN3032LE-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
This N-Channel enhancement mode MOSFET from Diodes Incorporated features low on-resistance (29mΩ at 10V) and fast switching. It is designed for high efficiency power management applications.
✓ Total Stock: 62,020 pcs

DMN3032LE-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
51,000 pcs
51000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN3032LE-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3032LE-13 Description

Short technical summary and product information.

The DMN3032LE-13 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It offers a maximum drain-source voltage of 30V and continuous drain current ratings of 5.6A at 25°C ambient and 15.4A at 25°C case temperature. The device features low on-resistance: 29mΩ maximum at VGS=10V and 35mΩ maximum at VGS=4.5V, enabling high efficiency in power management circuits.

 

Electrical characteristics include a low input capacitance of 498pF at VDS=15V and a typical gate charge of 11.3nC, contributing to fast switching speeds. The gate threshold voltage is a maximum of 2V at ID=250µA, and the gate-source voltage range is ±20V. The device also includes a body diode with a maximum continuous forward current of 1.5A.

 

Packaged in a surface mount SOT223 (TO-261-4, TO-261AA) case, the DMN3032LE-13 is suitable for automated assembly. It is MSL Level 1 per J-STD-020, with a maximum power dissipation of 1.8W at 25°C ambient and 14W at 25°C case temperature. The operating junction temperature range is -55°C to +150°C.

 

Typical applications include DC motor control, DC-AC inverters, and other high-efficiency power management systems. The device is fully RoHS compliant, lead-free, and halogen-free, and qualified to AEC-Q101 standards for automotive reliability.

DMN3032LE-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN3032LE-13 - N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

DMN3032LE-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3032LE-13 Features

  • Low on-resistance of 29mΩ at 10V.
  • Low input capacitance of 498pF.
  • Fast switching speed.
  • Surface mount SOT223 package.
  • RoHS and halogen-free compliant.

DMN3032LE-13 Applications

  • DC motor control applications.
  • DC-AC inverter circuits.
  • High efficiency power management.
  • Battery powered systems.

DMN3032LE-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30 V

What is the package type?

SOT223 (TO-261-4, TO-261AA)

What is the operating temperature range?

-55°C to +150°C (junction)

Is this component RoHS compliant?

Yes, RoHS compliant and lead-free.

What is the maximum continuous drain current?

5.6 A at 25°C ambient; 15.4 A at 25°C case temperature

What is the on-resistance value?

29 mΩ maximum at VGS=10V, ID=3.2A

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