| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN3031LSS-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for general-purpose switching applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9A at 25°C ambient temperature, making it suitable for low to medium power circuits.
Key electrical characteristics include a low on-resistance (Rds(on)) of 18.5mΩ maximum at VGS=10V and ID=9A, and 31mΩ maximum at VGS=4.5V and ID=7A. The gate threshold voltage is typically 2.1V at 250µA drain current. The device has a total gate charge of 25nC at VGS=10V and an input capacitance of 741pF at VDS=15V, enabling fast switching performance.
The DMN3031LSS-13 is housed in a standard 8-SOIC (0.154", 3.90mm width) surface mount package, also referred to as 8-SOP. It is designed for surface mount assembly and can dissipate up to 2.5W when mounted on a 2 oz copper pad layout. The device operates over a junction temperature range of -55°C to +150°C and is rated for moisture sensitivity level 1 per J-STD-020D. It is lead-free by design and RoHS3 compliant, and also qualifies as a 'Green' device.
Please note that this part is not recommended for new designs; Diodes Incorporated suggests using the DMN3030LSS as an alternative. The DMN3031LSS-13 is qualified to AEC-Q101 standards for high reliability applications.
30V (minimum).
8-SOIC (0.154", 3.90mm Width) also known as 8-SOP.
-55°C to +150°C (junction).
Yes, it is RoHS3 compliant.
No, it is not recommended for new designs. The suggested alternative is DMN3030LSS.
Yes, it is qualified to AEC-Q101 standards.