| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Halogen Free | |
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The DMN3025LSS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is suitable for high-efficiency power management applications including backlighting, DC-DC converters, and general power management functions.
The device features a drain-to-source breakdown voltage of 30V and a maximum continuous drain current of 7.2A at 25°C ambient temperature. On-resistance is rated at 20mΩ maximum with a 10V gate drive, and 31mΩ with a 4.5V gate drive. The MOSFET supports gate-source voltages up to ±20V and has a maximum gate threshold voltage of 2V.
This MOSFET is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, halogen and antimony free. It is packaged in an SO-8 surface mount package with matte tin annealed terminals over a copper leadframe, and is solderable per MIL-STD-202, Method 208.
The device operates over a junction temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.4W at 25°C ambient temperature (steady state) and a thermal resistance junction-to-ambient of 87°C/W.
The maximum drain-to-source breakdown voltage is 30V.
The maximum continuous drain current is 7.2A at 25°C ambient temperature with VGS=10V (steady state).
The maximum on-resistance is 20mΩ at VGS=10V and 31mΩ at VGS=4.5V.
The junction operating temperature range is -55°C to 150°C.
Yes, the device is fully RoHS compliant and lead-free.
The device is available in an SO-8 surface mount package (8-SOIC, 0.154 inch width).
The maximum gate-source voltage is ±20V.