| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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97,020 pcs
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97020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Vgs (Max) | |
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The DMN3025LFV-7 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high-efficiency power management applications. It features a low maximum on-state resistance (RDS(on)) of 18 mΩ at VGS = 10V and 30 mΩ at VGS = 4.5V, minimizing conduction losses. The device supports a continuous drain current up to 25A at Tc=+25°C and 20A at Tc=+70°C, with a pulsed current rating of 55A.
This MOSFET delivers superior switching performance with a low gate charge of 9.8 nC at 10V and input capacitance of 500 pF at 15V, making it suitable for DC-DC converters, backlighting, and power management functions. The avalanche energy rating of 9.8 mJ (L=0.1mH) ensures robust performance under unclamped inductive switching conditions.
The part is housed in a compact PowerDI3333-8 (Type UX) surface mount package, which occupies only 33% of the board area compared to SO-8, enabling higher density end products. It is fully RoHS3 compliant, halogen and antimony free, and rated MSL Level 1 per J-STD-020. Operating junction temperature ranges from -55°C to 150°C.
30 V.
8-PowerVDFN (PowerDI3333-8 Type UX).
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant per EU Directive 2011/65/EU.
2 V at 250 µA drain current.
18 mΩ at 7 A, 10 V.
500 pF at 15 V drain-source.