| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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68,520 pcs
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68520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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29,833 pcs
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29833 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The DMN3024LK3-13 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management. It features a drain-source voltage of 30V and continuous drain current of 14.4A at 25°C (free air) or 9.78A when mounted on a PCB. The on-resistance is typically 24mΩ at 10V gate drive and 39mΩ at 4.5V, enabling low conduction losses.
This MOSFET offers fast switching performance with a maximum gate charge of 12.9nC at 10V and input capacitance of 608pF at 15V. The gate threshold voltage is 3V maximum at 250µA. It is housed in a surface-mount TO-252-3 (DPak) package with a matte tin finish over a copper leadframe.
The device is RoHS3 compliant and classified as a 'Green' component. It has a moisture sensitivity level of 1 per J-STD-020D and UL flammability rating 94V-0. Typical applications include backlighting, DC-DC converters, and general power management functions.
30V.
TO-252-3 (DPak, SC-63).
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant and also a 'Green' component.
14.4A continuous at 25°C (free air), 9.78A on PCB.
24mΩ maximum at 7A, 10V.
3V maximum at 250µA.