DMN3023L-7 N-Channel enhancement mode MOSFET with 30V drain-source voltage and 6.2A continuous drain current. Packaged in SOT-23-3 for surface mount applications.
Mfr Part #:

DMN3023L-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 30V drain-source voltage and 6.2A continuous drain current. Packaged in SOT-23-3 for surface mount applications.
✓ Total Stock: 1,086,679 pcs

DMN3023L-7 Available from 3 distributors

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1,084,020 pcs
1084020 pcs On Request 1 On Request On Request On Request On Request On Request
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2,509 pcs
2509 pcs On Request 1 On Request On Request 21+ On Request On Request
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150 pcs
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DMN3023L-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3023L-7 Description

Short technical summary and product information.

The DMN3023L-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 6.2A at 25°C ambient temperature. The device offers low on-resistance of 25mOhm at Vgs=10V and 28mOhm at Vgs=4.5V, enabling efficient power management.

 

Key electrical characteristics include a gate threshold voltage of 1.8V maximum at Id=250µA, input capacitance of 873pF at Vds=15V, and gate charge of 18.4nC at Vgs=10V. The MOSFET is designed for fast switching with low input/output leakage and ESD protected gate.

 

The device is housed in a SOT-23-3 surface mount package with matte tin annealed over copper leadframe terminals. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, halogen and antimony free. Typical applications include load switching, DC-DC converters, and power management functions.

DMN3023L-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN3023L-7 N-Channel MOSFET
Subcategory: N-Channel MOSFET

DMN3023L-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3023L-7 Features

  • Low on-resistance of 25mOhm at 10V gate drive.
  • Rated for 30V drain-source voltage and 6.2A continuous current.
  • ESD protected gate for enhanced reliability.
  • Qualified to AEC-Q101 for automotive applications.
  • RoHS compliant and halogen-free green device.

DMN3023L-7 Applications

  • Ideal for load switching in power management circuits.
  • Used in DC-DC converter designs.
  • Suitable for general purpose power management functions.

DMN3023L-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3023L-7?

30V.

What package is the DMN3023L-7 available in?

SOT-23-3 surface mount package.

What is the operating temperature range of the DMN3023L-7?

-55°C to 150°C (junction temperature).

Is the DMN3023L-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the continuous drain current rating?

6.2A at 25°C ambient, 4.9A at 70°C.

What is the gate threshold voltage?

1.8V maximum at Id=250µA.

What is the on-resistance at 4.5V gate drive?

28mOhm maximum at Id=5.8A, Vgs=4.5V.

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