DMN3021LFDF-7 N-Channel MOSFET with 30V drain-source voltage, 9.3A continuous drain current, and low on-resistance of 15mOhm at 10V. Surface mount package U-DFN2020-6.
Mfr Part #:

DMN3021LFDF-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 30V drain-source voltage, 9.3A continuous drain current, and low on-resistance of 15mOhm at 10V. Surface mount package U-DFN2020-6.
✓ Total Stock: 6,000 pcs

DMN3021LFDF-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 1928+ On Request On Request

DMN3021LFDF-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id

DMN3021LFDF-7 Description

Short technical summary and product information.

The DMN3021LFDF-7 is a 30V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.

 

Key electrical characteristics include a maximum drain-source voltage of 30V, continuous drain current of 9.3A at 25°C ambient temperature, and maximum on-resistance of 15mOhm at Vgs=10V and Id=7A (20mOhm at Vgs=4.5V). The device features a low gate threshold voltage of 2.2V max, gate charge of 14nC at 10V, and input capacitance of 706pF at Vds=15V, enabling fast and efficient switching.

 

The MOSFET is housed in a compact U-DFN2020-6 surface mount package with a 0.6mm profile and 4mm2 footprint, ideal for low profile and space-constrained designs. It supports an operating junction temperature range of -55°C to 150°C and is fully RoHS3 compliant, lead-free, and halogen/antimony free (Green Device).

 

Typical applications include battery management, power management functions, and DC-DC converter circuits. The part is available in tape and reel packaging with 3000 pieces per reel.

DMN3021LFDF-7 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: DMN3021LFDF-7 - N-Channel MOSFET 30V 9.3A 15mOhm
Subcategory: Single N-Channel MOSFET

DMN3021LFDF-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3021LFDF-7 Features

  • 30V drain-source breakdown voltage.
  • Low on-resistance of 15mOhm at 10V.
  • Continuous drain current 9.3A at 25°C.
  • Surface mount U-DFN2020-6 package.
  • RoHS3 compliant and lead-free.

DMN3021LFDF-7 Applications

  • Battery management systems.
  • Power management functions.
  • DC-DC converter circuits.
  • Low profile consumer electronics.

DMN3021LFDF-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of DMN3021LFDF-7?

The maximum drain-source voltage is 30V.

What package type does the DMN3021LFDF-7 use?

It uses the U-DFN2020-6 surface mount package.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3021LFDF-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the continuous drain current rating?

The continuous drain current is 9.3A at 25°C ambient temperature.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 15mOhm at Vgs=10V and Id=7A.

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