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DMN3018SSD-13 Dual N-channel enhancement mode MOSFET rated for 30V drain-source voltage and 6.7A continuous drain current. Features low on-resistance of 22mOhm at Vgs=10V.
Mfr Part #:

DMN3018SSD-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET rated for 30V drain-source voltage and 6.7A continuous drain current. Features low on-resistance of 22mOhm at Vgs=10V.
✓ Total Stock: 10,000 pcs

DMN3018SSD-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 24+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN3018SSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight
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DMN3018SSD-13 Description

Short technical summary and product information.

The DMN3018SSD-13 is a 30V dual N-channel enhancement mode MOSFET from Diodes Incorporated designed for high efficiency power management. It offers low on-state resistance of 22mOhm maximum at Vgs=10V and Id=10A, and 30mOhm at Vgs=4.5V and Id=5.2A. The device supports continuous drain current up to 6.7A at 25°C and pulsed current up to 60A.

 

This MOSFET is 100% avalanche rated and features an ESD protected gate. It is fabricated with logic-level gate technology enabling direct drive from low-voltage control signals. Total gate charge is 13.2nC at Vgs=10V and input capacitance is 697pF at Vds=15V.

 

The part is housed in an SO-8 surface-mount package with matte tin annealed over copper leadframe termination. It is qualified to AEC-Q101 standards for high reliability applications and is fully RoHS3, lead-free, and halogen-free.

DMN3018SSD-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN3018SSD-13 30V Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel Enhancement Mode

DMN3018SSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN3018SSD-13 Features

  • 30V drain-source breakdown voltage.
  • 6.7A continuous drain current at 25°C.
  • Low on-resistance of 22mOhm at 10V.
  • 100% avalanche rated for ruggedness.
  • AEC-Q101 qualified for automotive reliability.

DMN3018SSD-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in backlighting power management.
  • Suitable for portable device power switching.
  • Designed for high-efficiency power applications.

DMN3018SSD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3018SSD-13?

30V

What is the package type for DMN3018SSD-13?

SO-8 surface mount package.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

Is the DMN3018SSD-13 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free.

What is the continuous drain current rating?

6.7A steady state at TA=25°C, Vgs=10V.

What is the maximum on-resistance?

22mOhm at Vgs=10V, Id=10A.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards.

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