| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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53,520 pcs
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53520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN3015LSD-13 is a 30V dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It offers a maximum drain-source voltage of 30V and continuous drain current of 8.4A at 25°C (6.8A at 70°C). The device features low on-resistance: 15mΩ maximum at Vgs=10V and 18mΩ at Vgs=4.5V, enabling low conduction losses. Gate charge is 25.1nC maximum at 10V, and input capacitance is 1415pF at Vds=15V, supporting fast switching. The MOSFET is configured as two independent N-channel devices in a single SO-8 package, suitable for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C. The part is fully RoHS compliant, halogen and antimony free (green), and qualified to AEC-Q101 standards for automotive reliability. Typical applications include DC-DC converters, power management functions, and backlighting circuits.
The drain-source breakdown voltage is 30V minimum.
The maximum continuous drain current is 8.4A at 25°C with Vgs=10V.
The maximum on-resistance is 15mΩ at Vgs=10V and Id=12A, and 18mΩ at Vgs=4.5V.
It is available in an SO-8 (8-SOIC) surface mount package.
The junction temperature range is -55°C to 150°C.
Yes, it is fully RoHS compliant (RoHS3) and lead-free.
The maximum total gate charge is 25.1nC at Vgs=10V.