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DMN3012LEG-13 The DMN3012LEG-13 is a 30V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance (6mOhm for Q2) and is housed in a PowerDI3333-8 package.
Mfr Part #:

DMN3012LEG-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN3012LEG-13 is a 30V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance (6mOhm for Q2) and is housed in a PowerDI3333-8 package.
Total Stock: 6,000 pcs

DMN3012LEG-13 Available from 1 distributor

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Non-Authorised
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Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 1928+ On Request On Request

DMN3012LEG-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current (Maximum @ TA = +25 °C, VGS = 5 V)
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Gate-to-Source Voltage
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Pulsed Drain Current (Maximum @ tp=10 µs, Duty=1%)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

DMN3012LEG-13 Description

Short technical summary and product information.

The DMN3012LEG-13 is a 30V synchronous N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It integrates two independent MOSFET channels (Q1 and Q2) with different RDS(ON) characteristics: Q1 offers 12mOhm max at VGS=5V, ID=15A, while Q2 offers 6mOhm max under the same conditions. The device is rated for a continuous drain current of 20A per channel at TC=+25°C (10A at TA=+25°C) and can handle pulsed currents up to 70A (Q1) and 100A (Q2).

 

This MOSFET is ideal for high-efficiency power management applications such as DC-DC converters and power management functions. It features low gate charge (6.1nC for Q1, 12.6nC for Q2 at VGS=4.5V) and fast switching speed. The device is 100% tested for unclamped inductive switching (UIS) and has a gate threshold voltage of 2.1V max for Q1 and 1.15V max for Q2 at ID=250µA.

 

The DMN3012LEG-13 is offered in the compact PowerDI3333-8 (Type D) surface mount package, which measures 3.3mm x 3.3mm and has a low profile. The package is molded with green molding compound and is rated UL 94V-0. The terminals are matte tin annealed over copper leadframe, solderable per MIL-STD-202, Method 208. The device is RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020.

DMN3012LEG-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN3012LEG-13 30V Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN3012LEG-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMN3012LEG-13 Features

  • Dual N-channel MOSFET configuration.
  • Low on-resistance of 6 mOhm (Q2).
  • 30V drain-source voltage rating.
  • Surface mount PowerDI3333-8 package.
  • RoHS compliant and halogen-free.

DMN3012LEG-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management functions.
  • Suitable for synchronous rectification.
  • Applicable in battery protection circuits.

DMN3012LEG-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3012LEG-13?

The maximum drain-source voltage (Vdss) is 30V.

What package is the DMN3012LEG-13 available in?

It is available in an 8-PowerLDFN package, specifically the PowerDI3333-8 (Type D) surface mount package.

What is the operating temperature range of the DMN3012LEG-13?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3012LEG-13 RoHS compliant?

Yes, it is RoHS compliant, halogen and antimony free (green device).

What is the continuous drain current rating of the DMN3012LEG-13?

The continuous drain current is 20A per channel at TC=+25°C (VGS=5V) and 10A per channel at TA=+25°C.

What are the gate threshold voltage values for each channel?

For Q1, the maximum gate threshold voltage is 2.1V at ID=250µA. For Q2, it is 1.15V at ID=250µA.

What are typical applications for the DMN3012LEG-13?

Typical applications include DC-DC converters and power management functions.

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