| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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220,000 pcs
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220000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
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The DMN3010LK3-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current of 43A at case temperature (Tc) and 13.1A at ambient temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 9.5 mΩ maximum at VGS=10V and ID=18A, ensuring minimal conduction losses. The gate charge is 37 nC at VGS=10V, and the input capacitance is 2075 pF at VDS=15V, enabling efficient switching performance. The device is designed for applications such as DC-DC converters, backlighting, and power management functions.
The MOSFET is housed in a surface mount TO-252-3 package (DPak, SC-63) with a weight of 0.33 grams. It is qualified to AEC-Q101 standards for automotive reliability and is halogen and antimony free, RoHS3 compliant. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 1.6W at ambient temperature (Ta).
The drain-source voltage (Vdss) is 30 V.
Surface mount TO-252-3 (DPak, SC-63).
-55°C to 150°C.
Yes, RoHS3 compliant.
9.5 mΩ at VGS=10V, ID=18A.
37 nC at VGS=10V.
Yes, it is qualified to AEC-Q101 standards.