| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3008SFGQ-7 is a 30V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for automotive and power management applications. It is qualified to AEC-Q101 and supports PPAP requirements.
This MOSFET delivers a maximum drain current of 62A at TC=+25°C and features a low maximum on-resistance of 4.4mΩ at VGS=10V. It is also characterized for operation at VGS=4.5V with a maximum RDS(on) of 5.5mΩ, enabling efficient low-voltage gate drive.
The device is housed in a compact PowerDI3333-8 surface-mount package, which occupies only 33% of the board area of an SO-8 package. It supports an operating junction temperature range of -55°C to +150°C and is rated for a maximum power dissipation of 900mW at ambient temperature.
The DMN3008SFGQ-7 is fully RoHS3 compliant, lead-free, and halogen-free, making it suitable for environmentally conscious designs.
The maximum drain-source voltage (Vdss) is 30 V.
The maximum drain current is 62 A at a case temperature of +25°C, and 17.6 A at an ambient temperature of +25°C.
The maximum on-resistance is 4.4 mΩ at VGS = 10 V and ID = 13.5 A, and 5.5 mΩ at VGS = 4.5 V.
The DMN3008SFGQ-7 is housed in a PowerDI3333-8 surface-mount package.
The operating junction temperature range is -55°C to +150°C.
Yes, the DMN3008SFGQ-7 is fully RoHS3 compliant (EU Directive 2002/95/EC, 2011/65/EU, and 2015/863/EU).
The maximum gate threshold voltage is 2.3 V at a drain current of 250 µA.