DMN3008SFG-7 N-Channel enhancement mode MOSFET rated for 30V drain-source voltage and 17.6A continuous drain current (at Ta=25°C). Features low on-resistance of 4.4mΩ at Vgs=10V and is surface mounted in a PowerDI3333-8 package.
Mfr Part #:

DMN3008SFG-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 30V drain-source voltage and 17.6A continuous drain current (at Ta=25°C). Features low on-resistance of 4.4mΩ at Vgs=10V and is surface mounted in a PowerDI3333-8 package.
✓ Total Stock: 4,534 pcs

DMN3008SFG-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,664 pcs
2664 pcs On Request 1 On Request On Request 1928+ On Request On Request
Non-Authorised Inventory information
1,870 pcs
1870 pcs On Request 1 On Request On Request 14+ On Request On Request

DMN3008SFG-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3008SFG-7 Description

Short technical summary and product information.

The DMN3008SFG-7 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It delivers a maximum continuous drain current of 17.6A at 25°C ambient temperature and 62A at case temperature, with a low drain-source on-resistance of 4.4mΩ at Vgs=10V and Id=62A. The gate threshold voltage is 2.3V maximum at Id=250µA, and the device supports drive voltages of 4.5V and 10V. Input capacitance is 3690pF at Vds=10V, and total gate charge is 86nC at Vgs=10V. Power dissipation is limited to 900mW at ambient temperature, and the operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a compact PowerDI3333-8 surface-mount package with matte tin terminals. It is qualified to AEC-Q101 for automotive reliability, RoHS3 compliant, halogen- and antimony-free, and moisture sensitivity level 1. Typical applications include backlighting, power management functions, and DC-DC converters.

DMN3008SFG-7 Quick Information

Product Type: MOSFET
Canonical Name: Diodes Incorporated DMN3008SFG-7 30V N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode MOSFET

DMN3008SFG-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN3008SFG-7 Features

  • 30V drain-source voltage rating.
  • Low on-resistance of 4.4mΩ at 10V.
  • Surface mount PowerDI3333-8 package.
  • Qualified to AEC-Q101 standards.
  • RoHS3 and halogen-free compliant.

DMN3008SFG-7 Applications

  • Ideal for backlighting applications.
  • Used in power management circuits.
  • Suitable for DC-DC converter designs.

DMN3008SFG-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 30 V.

What package does this MOSFET come in?

It is available in the PowerDI3333-8 surface mount package (8-PowerVDFN).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 (2011/65/EU) compliant and fully lead-free.

What is the maximum continuous drain current at case temperature?

The maximum continuous drain current at Tc=25°C is 62 A.

What is the typical gate threshold voltage?

The maximum gate threshold voltage is 2.3 V at Id=250 µA.

Does this device have automotive qualification?

Yes, it is qualified to AEC-Q101 standards.

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