| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3007LSSQ-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high efficiency power management. It features a maximum drain-source voltage of 30V and can handle continuous drain current up to 16A at 25°C (13A at 70°C). The device achieves a low on-resistance of 7mOhm at Vgs=10V (10mOhm at 4.5V), minimizing conduction losses.
With a gate threshold voltage up to 2.1V, the MOSFET is suitable for logic-level drive applications. Input capacitance is 2714pF and total gate charge is 64.2nC, enabling fast switching. The device is qualified to AEC-Q101 standards for automotive reliability, and is fully RoHS3 compliant, lead-free, and halogen-free.
Packaged in a surface-mount SO-8 (8-SOIC) case measuring 3.90mm width, the component weighs just 0.074g and is supplied in tape and reel packaging with 2500 pieces per reel. Operating junction temperature range is -55°C to +150°C, with a maximum power dissipation of 2.5W.
30V.
8-SOIC (SO-8) surface mount package.
-55°C to +150°C junction temperature.
Yes, it is RoHS3 compliant and totally lead-free.
16A at 25°C ambient; 13A at 70°C ambient.
Yes, it is qualified to AEC-Q101 standards.
Maximum 7mOhm at Vgs=10V, Id=15A.