| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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141,020 pcs
|
141020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel |
The Diodes Incorporated DMN2991UDJ-7 is a dual N-channel MOSFET designed for low voltage switching applications. It offers a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of up to 520mA at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 0.99 Ohms at 100mA and 4.5V, a gate threshold voltage (Vgs(th)) of 1V at 250µA, and a gate charge (Qg) of 0.35nC at 4.5V. The input capacitance (Ciss) is a maximum of 21.5pF at 15V.
This MOSFET has a maximum power dissipation of 400mW at ambient temperature and operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount SOT-963 package, suitable for high-density layouts in portable or space-limited products.
Applications include smartphones, wearable electronics, portable instruments, low voltage load switching, power management circuits, level shifters, and signal switching in consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the DMN2991UDJ-7 is 20V.
The continuous drain current (Id) is rated at 520mA at 25°C.
The maximum on-resistance (Rds(on)) is 0.99 Ohms when measured at 100mA drain current and 4.5V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 1V at a drain current of 250µA.
The DMN2991UDJ-7 can operate between -55°C and 150°C.
This MOSFET is supplied in a SOT-963 surface-mount package, typically on tape and reel.