DMN2990UFZ-7B N-channel MOSFET with 20V breakdown voltage and 250mA continuous drain current in an X2-DFN0606-3 surface mount package.
Mfr Part #:

DMN2990UFZ-7B

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel MOSFET with 20V breakdown voltage and 250mA continuous drain current in an X2-DFN0606-3 surface mount package.
✓ Total Stock: 9,115 pcs

DMN2990UFZ-7B Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,002 pcs
8002 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,113 pcs
1113 pcs On Request 1 On Request On Request 16+ On Request On Request

DMN2990UFZ-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2990UFZ-7B Description

Short technical summary and product information.

The DMN2990UFZ-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source breakdown voltage of 20V and a continuous drain current of 250mA at 25°C. The device is designed to minimize on-state resistance, with a maximum RDS(on) of 990mΩ at VGS=4.5V and 100mA, and supports gate drive voltages down to 1.2V.

 

Key electrical characteristics include a maximum gate threshold voltage of 1V at ID=250µA, input capacitance of 55.2pF at VDS=16V, and gate charge of 0.5nC. The MOSFET is ESD protected and qualified to AEC-Q101 standards for high reliability. It operates over a junction temperature range of -55°C to 150°C.

 

The device is supplied in a surface mount X2-DFN0606-3 (3-XFDFN) package with a maximum package height of 0.42mm and a 0.62mm x 0.62mm footprint. It is totally lead-free, fully RoHS compliant, and halogen and antimony free. Packaging is 10,000 pieces on tape and reel.

DMN2990UFZ-7B Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2990UFZ-7B N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

DMN2990UFZ-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2990UFZ-7B Features

  • Provides 20V drain-source breakdown voltage.
  • Supports 250mA continuous drain current.
  • Low on-resistance of 990mΩ at 4.5V.
  • Very low gate threshold voltage of 1V.
  • ESD protected gate for reliable operation.

DMN2990UFZ-7B Applications

  • Suitable for general purpose interfacing switches.
  • Used in power management circuitry.
  • Functions as an analog switch.

DMN2990UFZ-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 250mA at TA=25°C and 170mA at TA=85°C.

What is the maximum on-resistance at VGS=4.5V?

The maximum on-resistance is 990mΩ at VGS=4.5V and ID=100mA.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 1V at ID=250µA.

In which package is this device available?

The device is available in an X2-DFN0606-3 (3-XFDFN) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is this part RoHS compliant?

Yes, the datasheet states it is fully RoHS compliant, totally lead-free, and halogen and antimony free.

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