DMN2990UFA-7B DMN2990UFA-7B is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated, offering 510mA continuous drain current and low on-resistance down to 990mOhm.
Mfr Part #:

DMN2990UFA-7B

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2990UFA-7B is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated, offering 510mA continuous drain current and low on-resistance down to 990mOhm.
✓ Total Stock: 232,314 pcs

DMN2990UFA-7B Available from 3 distributors

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199,428 pcs
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DMN2990UFA-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id

DMN2990UFA-7B Description

Short technical summary and product information.

The DMN2990UFA-7B is a 20V N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 510mA at 25°C. The device achieves a low on-resistance of 990mOhm at 4.5V gate drive, with increasing resistance at lower gate voltages: 1.2Ω at 2.5V, 1.8Ω at 1.8V, and 2.4Ω at 1.5V. The gate threshold voltage is a maximum of 1V, enabling low-voltage operation.

 

The MOSFET offers excellent switching performance with an input capacitance of 27.6pF and a gate charge of 0.5nC, making it suitable for high-speed switching. It is housed in a compact X2-DFN0806-3 surface mount package with a profile of only 0.4mm, significantly reducing board space compared to SOT23 packages. The device is qualified to AEC-Q101 standards for automotive reliability.

 

Key features include ESD protected gate, very low gate threshold voltage, and a total lead-free and RoHS compliant design. The package is halogen and antimony free, meeting green device requirements. The DMN2990UFA-7B is ideal for general purpose interfacing switches, power management functions, and analog switch applications.

DMN2990UFA-7B Quick Information

Product Type: MOSFET
Canonical Name: DMN2990UFA-7B N-Channel MOSFET
Subcategory: N-Channel MOSFET

DMN2990UFA-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2990UFA-7B Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Low on-resistance of 990mOhm at 4.5V.
  • Very low gate threshold voltage of 1V max.
  • ESD protected gate for reliable operation.
  • Compact X2-DFN0806-3 surface mount package.

DMN2990UFA-7B Applications

  • General purpose interfacing switch.
  • Power management functions in portable devices.
  • Analog switch applications.
  • High efficiency DC-DC converters.

DMN2990UFA-7B FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the DMN2990UFA-7B?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the package type of the DMN2990UFA-7B?

The device is housed in an X2-DFN0806-3 surface mount package.

What is the operating temperature range of the DMN2990UFA-7B?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2990UFA-7B RoHS compliant?

Yes, it is RoHS3 compliant as verified by the datasheet.

What is the maximum continuous drain current of the DMN2990UFA-7B?

The maximum continuous drain current is 510mA at Ta=25°C with Vgs=4.5V.

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