| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,811,020 pcs
|
1811020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,464 pcs
|
8464 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN2990UDJ-7 from Diodes Incorporated is a dual N-channel enhancement mode MOSFET designed for low on-state resistance and fast switching.
With a maximum drain-source voltage of 20V and continuous drain current rating of 450mA (at VGS = 4.5V), this device is suitable for power management and general-purpose switching applications. It features a logic-level gate with a gate threshold voltage of 1V maximum, making it compatible with low-voltage control signals.
The MOSFET offers low on-resistance: 990mOhm at VGS = 4.5V, 1.2Ω at VGS = 2.5V, 1.8Ω at VGS = 1.8V, and 2.4Ω at VGS = 1.5V. Input capacitance is only 27.6pF at VDS = 16V, and gate charge is 0.5nC at VGS = 4.5V, enabling high-speed switching.
Housed in an ultra-small SOT-963 surface-mount package with a maximum height of 0.45mm, the device is ESD protected and qualified to AEC-Q101 standards for high reliability. Operating temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 20V.
450mA at TA = 25°C with VGS = 4.5V, steady state.
It comes in a SOT-963 surface mount package.
The operating temperature range is -55°C to 150°C (junction).
Yes, it is fully RoHS3 compliant and totally lead-free.
Maximum 990mOhm at Id = 100mA, VGS = 4.5V.
Yes, the gate is ESD protected.