DMN2990UDJ-7 Dual N-channel enhancement mode MOSFET with 20V drain-source voltage and 450mA continuous drain current in an ultra-small SOT-963 package.
Mfr Part #:

DMN2990UDJ-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET with 20V drain-source voltage and 450mA continuous drain current in an ultra-small SOT-963 package.
✓ Total Stock: 1,819,484 pcs

DMN2990UDJ-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
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Non-Authorised Inventory information
1,811,020 pcs
1811020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,464 pcs
8464 pcs On Request 1 On Request On Request 18+ On Request On Request

DMN2990UDJ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN2990UDJ-7 Description

Short technical summary and product information.

The DMN2990UDJ-7 from Diodes Incorporated is a dual N-channel enhancement mode MOSFET designed for low on-state resistance and fast switching.

 

With a maximum drain-source voltage of 20V and continuous drain current rating of 450mA (at VGS = 4.5V), this device is suitable for power management and general-purpose switching applications. It features a logic-level gate with a gate threshold voltage of 1V maximum, making it compatible with low-voltage control signals.

 

The MOSFET offers low on-resistance: 990mOhm at VGS = 4.5V, 1.2Ω at VGS = 2.5V, 1.8Ω at VGS = 1.8V, and 2.4Ω at VGS = 1.5V. Input capacitance is only 27.6pF at VDS = 16V, and gate charge is 0.5nC at VGS = 4.5V, enabling high-speed switching.

 

Housed in an ultra-small SOT-963 surface-mount package with a maximum height of 0.45mm, the device is ESD protected and qualified to AEC-Q101 standards for high reliability. Operating temperature range is -55°C to 150°C.

DMN2990UDJ-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN2990UDJ-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel Enhancement Mode

DMN2990UDJ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2990UDJ-7 Features

  • 450mA continuous drain current rating.
  • Low on-resistance of 990mOhm at 4.5V.
  • Logic-level gate with 1V max threshold.
  • Ultra-small SOT-963 package with 0.45mm height.
  • AEC-Q101 qualified for automotive reliability.

DMN2990UDJ-7 Applications

  • General purpose interfacing switching applications.
  • Power management in portable electronics.
  • DC-DC converter and analog switch circuits.
  • High-efficiency low-voltage load switching.

DMN2990UDJ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2990UDJ-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

450mA at TA = 25°C with VGS = 4.5V, steady state.

What package does the DMN2990UDJ-7 come in?

It comes in a SOT-963 surface mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

Is the DMN2990UDJ-7 RoHS compliant?

Yes, it is fully RoHS3 compliant and totally lead-free.

What is the typical on-resistance at VGS = 4.5V?

Maximum 990mOhm at Id = 100mA, VGS = 4.5V.

Does the DMN2990UDJ-7 have ESD protection?

Yes, the gate is ESD protected.

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