DMN26D0UT-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. 20V drain-source voltage, 230mA drain current, 300mW power dissipation in SOT-523 surface mount package.
Mfr Part #:

DMN26D0UT-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. 20V drain-source voltage, 230mA drain current, 300mW power dissipation in SOT-523 surface mount package.
✓ Total Stock: 250,083 pcs

DMN26D0UT-7 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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226,020 pcs
226020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
24,000 pcs
24000 pcs On Request 1 On Request On Request 21+ On Request On Request
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36 pcs
36 pcs On Request 1 On Request On Request On Request On Request On Request
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27 pcs
27 pcs On Request 1 On Request On Request 14+ On Request On Request

DMN26D0UT-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN26D0UT-7 Description

Short technical summary and product information.

The DMN26D0UT-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source breakdown voltage of 20V and a continuous drain current of 230mA at 25°C ambient. The device offers low on-resistance, with a maximum of 3Ω at VGS=4.5V and ID=100mA, and is designed for fast switching with low input capacitance of 14.1pF.

 

This MOSFET is housed in an ultra-small SOT-523 surface mount package, making it suitable for compact designs. It has a maximum power dissipation of 300mW and an operating junction temperature range of -55°C to +150°C. The gate threshold voltage is 1V maximum at ID=250µA, and the gate-source voltage is rated at ±10V.

 

The DMN26D0UT-7 is qualified to AEC-Q101 standards for high reliability and is lead, halogen, and antimony free by design. It is RoHS compliant and has an MSL of Level 1 per J-STD-020. Typical applications include load switching, DC-DC converters, and signal switching in portable and battery-powered equipment.

DMN26D0UT-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN26D0UT-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN26D0UT-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead, Halogen, and Antimony Free By Design

DMN26D0UT-7 Features

  • Low on-resistance of 3Ω at 4.5V.
  • Ultra-small SOT-523 surface mount package.
  • AEC-Q101 qualified for high reliability.
  • Lead, halogen, and antimony free by design.
  • ESD protected gate for robust operation.

DMN26D0UT-7 Applications

  • Ideal for load switching in portable devices.
  • Used in DC-DC converter circuits.
  • Suitable for signal switching applications.
  • Designed for battery-powered equipment.

DMN26D0UT-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN26D0UT-7?

The drain-source breakdown voltage is 20V minimum.

What is the maximum drain current?

The continuous drain current is 230mA at 25°C ambient.

What package is the DMN26D0UT-7 available in?

It is available in the SOT-523 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the DMN26D0UT-7 RoHS compliant?

Yes, the datasheet states it is RoHS compliant and lead, halogen, and antimony free by design.

What is the maximum power dissipation?

The maximum power dissipation is 300mW at 25°C ambient.

What is the gate threshold voltage?

The gate threshold voltage is 0.5V minimum and 1V maximum at VDS=VGS, ID=250µA.

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