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DMN26D0UFB4-7B DMN26D0UFB4-7B is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 240mA drain current, and 3Ω maximum on-resistance at 4.5V gate drive.
Mfr Part #:

DMN26D0UFB4-7B

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN26D0UFB4-7B is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 240mA drain current, and 3Ω maximum on-resistance at 4.5V gate drive.
✓ Total Stock: 10,000 pcs

DMN26D0UFB4-7B Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request 1314+ On Request On Request
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DMN26D0UFB4-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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DMN26D0UFB4-7B Description

Short technical summary and product information.

The DMN26D0UFB4-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated. It has a maximum drain-source voltage of 20V and a continuous drain current of 240mA at 25°C. The device features a low on-resistance of 3Ω at 4.5V gate drive and 6Ω at 1.8V, making it suitable for low-voltage power management applications.

 

This MOSFET offers a very low gate threshold voltage of 900mV maximum, allowing direct interface with low-voltage logic. Its low input capacitance of 14.1pF contributes to fast switching performance, and the ESD protected gate ensures reliable handling.

 

The device is packaged in an ultra-small X2-DFN1006-3 surface mount package with a maximum height of 0.4mm, ideal for space-constrained designs. It is MSL level 1 per J-STD-020, and complies with RoHS3, halogen-free, and lead-free requirements. The terminal finish is NiPdAu over copper leadframe.

 

Typical applications include DC-DC converters and power management functions in portable electronics. The -7B variant is supplied in tape and reel packaging with 10,000 units per reel.

DMN26D0UFB4-7B Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Enhancement Mode MOSFET, 20V, 240mA
Subcategory: Single MOSFET

DMN26D0UFB4-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN26D0UFB4-7B Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Low 3Ω on-resistance at 4.5V drive.
  • Very low gate threshold voltage of 900mV.
  • Low input capacitance of 14.1pF.
  • ESD protected gate for robust handling.

DMN26D0UFB4-7B Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management functions.
  • Ideal for low-voltage switching applications.
  • Fits compact surface-mount designs.
  • Works in battery-powered portable devices.

DMN26D0UFB4-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN26D0UFB4-7B?

The maximum drain-source voltage is 20V.

What is the maximum drain current of the DMN26D0UFB4-7B?

The maximum drain current is 240mA at TA=+25°C.

What is the on-resistance of the DMN26D0UFB4-7B?

The maximum on-resistance is 3Ω at VGS=4.5V and 6Ω at VGS=1.8V, measured at ID=100mA.

What is the gate threshold voltage of the DMN26D0UFB4-7B?

The maximum gate threshold voltage is 900mV at ID=250µA.

What package type is the DMN26D0UFB4-7B available in?

It is available in the X2-DFN1006-3 surface mount package.

Is the DMN26D0UFB4-7B RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

Does the DMN26D0UFB4-7B have ESD protection?

Yes, the device has an ESD protected gate.

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