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DMN26D0UFB4-7 N-Channel enhancement mode MOSFET with 20V Vds, 230mA Id, and 3Ω Rds(on) at 4.5V. Packaged in X2-DFN1006-3 for surface mount.
Mfr Part #:

DMN26D0UFB4-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V Vds, 230mA Id, and 3Ω Rds(on) at 4.5V. Packaged in X2-DFN1006-3 for surface mount.
✓ Total Stock: 1,000 pcs

DMN26D0UFB4-7 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN26D0UFB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN26D0UFB4-7 Description

Short technical summary and product information.

DMN26D0UFB4-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high-efficiency power management applications. It features a drain-source voltage rating of 20V and a continuous drain current of 240mA at Vgs=4.5V (180mA at Vgs=1.8V). The on-resistance is a low 3Ω maximum at Vgs=4.5V and Id=100mA, and 6Ω at Vgs=1.8V and Id=180mA. The gate threshold voltage is 1.1V maximum, enabling direct drive from low-voltage logic levels.

 

The MOSFET offers low input capacitance of 14.1pF and ESD protected gate for robust operation. Power dissipation is 350mW at 25°C, with a wide operating junction temperature range from -55°C to 150°C. The device is housed in an ultra-small X2-DFN1006-3 surface mount package, measuring only 0.4mm in height. It is RoHS3 compliant, halogen and antimony free, and rated MSL Level 1 for unlimited moisture sensitivity.

 

This component is ideal for DC-DC converters and power management functions in portable and battery-powered electronics. It is supplied in tape and reel packaging with 3000 units per reel.

DMN26D0UFB4-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN26D0UFB4-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN26D0UFB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN26D0UFB4-7 Features

  • N-Channel enhancement mode MOSFET.
  • Low on-resistance of 3Ω at 4.5V.
  • Very low gate threshold voltage of 1.1V.
  • Ultra-small X2-DFN1006-3 package.
  • ESD protected gate for robustness.

DMN26D0UFB4-7 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management functions.
  • Suitable for portable battery-powered devices.
  • Can be driven by 1.8V logic.
  • Fast switching for high efficiency.

DMN26D0UFB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN26D0UFB4-7?

20V.

What is the package type of the DMN26D0UFB4-7?

X2-DFN1006-3.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN26D0UFB4-7 RoHS compliant?

Yes, RoHS3 compliant and lead-free.

What is the maximum drain current?

240mA at Vgs=4.5V, 180mA at Vgs=1.8V at 25°C.

What is the on-resistance of this MOSFET?

3Ω maximum at Vgs=4.5V, Id=100mA; 6Ω at Vgs=1.8V, Id=180mA.

What is the gate threshold voltage?

Maximum 1.1V at Id=250µA.

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