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DMN26D0UDJ-7 Dual N-channel MOSFET with 20V drain-source voltage and 240mA continuous drain current. Features logic level gate and low on-resistance of 3 Ohm at 4.5V.
Mfr Part #:

DMN26D0UDJ-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel MOSFET with 20V drain-source voltage and 240mA continuous drain current. Features logic level gate and low on-resistance of 3 Ohm at 4.5V.
✓ Total Stock: 104,010 pcs

DMN26D0UDJ-7 Available from 4 distributors

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✓ Non-Authorised
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DMN26D0UDJ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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DMN26D0UDJ-7 Description

Short technical summary and product information.

The DMN26D0UDJ-7 is a dual N-channel MOSFET from Diodes Incorporated, designed for surface mount applications. It features two independent N-channel MOSFETs in a single SOT-963 package, offering space-saving benefits.

 

Key electrical specifications include a drain-source voltage (Vdss) of 20V, continuous drain current of 240mA, and maximum power dissipation of 300mW. The device has a logic level gate with a maximum threshold voltage of 1.05V at 250µA, enabling direct drive from low-voltage logic. On-resistance is typically 3 Ohm at 100mA and 4.5V gate drive.

 

The MOSFET operates over a junction temperature range of -55°C to 150°C. Input capacitance is 14.1pF at 15V, suitable for high-frequency switching applications. The SOT-963 package is compact and suitable for dense PCB layouts.

 

This component is RoHS3 compliant and has an MSL of 1 (unlimited). It is suitable for load switching, signal switching, and power management in portable and battery-powered devices.

DMN26D0UDJ-7 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel MOSFET, 20V, 240mA, SOT-963
Subcategory: Arrays

DMN26D0UDJ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMN26D0UDJ-7 Features

  • Dual N-channel MOSFET in SOT-963 package.
  • 20V drain-source voltage rating.
  • 240mA continuous drain current.
  • Logic level gate for low-voltage drive.
  • Low on-resistance of 3 Ohm at 4.5V.

DMN26D0UDJ-7 Applications

  • Load switching in portable electronics.
  • Signal switching in low-power circuits.
  • Power management in battery-powered devices.
  • High-frequency switching due to low capacitance.

DMN26D0UDJ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What is the package type?

SOT-963.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the component RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the continuous drain current?

240mA.

What is the gate threshold voltage?

Maximum 1.05V at 250µA.

What is the on-resistance?

Maximum 3 Ohm at 100mA and 4.5V.

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