| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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The DMN25D0UFA-7B is a 25V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for low on-resistance and high efficiency power management. With a maximum drain-source voltage of 25V and continuous drain current of 0.32A (Note 6), this MOSFET offers a maximum on-resistance of 4 Ohm at 4.5V gate drive, making it suitable for load switching and portable applications.
The device features ESD protection exceeding 6kV (Human Body Model), a low typical gate threshold voltage of 0.9V, and is qualified to AEC-Q101 high reliability standards. It is packaged in an ultra-low profile X2-DFN0806-3 surface mount package with a 0.48mm² footprint, significantly smaller than SOT23. The MOSFET is fully RoHS compliant, halogen and antimony free, and MSL Level 1.
It is an N-Channel Enhancement Mode MOSFET (Metal Oxide) from Diodes Incorporated.
The maximum drain-source voltage (Vdss) is 25V.
The continuous drain current is 0.32A (Note 6) or 0.24A (Note 5) depending on test conditions.
Maximum Rds(on) is 4 Ohm at VGS=4.5V (ID=0.24A) and 5 Ohm at VGS=2.7V (ID=0.1A).
The junction operating temperature range is -55°C to +150°C.
Yes, it is RoHS compliant, halogen and antimony free, and MSL Level 1 per J-STD-020.
It is available in an X2-DFN0806-3 surface mount package.