| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN2500UFB4-7 is an N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It features a drain-source voltage rating of 20V and a continuous drain current of 810mA at 25°C ambient temperature. The device offers low on-resistance of 400mΩ maximum at 4.5V gate-source voltage and 700mΩ maximum at 1.8V gate-source voltage, enabling efficient switching in low-voltage circuits.
This MOSFET is housed in an ultra-small X2-DFN1006-3 surface mount package with a maximum height of 0.4mm, making it suitable for space-constrained designs. The device includes ESD protected gate and fast switching speed characteristics. It is qualified to AEC-Q101 standards for high reliability applications.
The DMN2500UFB4-7 is totally lead-free, fully RoHS compliant, and halogen and antimony free. It is suitable for DC-DC converters and power management functions in portable and battery-powered equipment.
The drain-source voltage rating is 20V.
The continuous drain current is 810mA at 25°C ambient temperature.
The maximum on-resistance is 400mΩ at Vgs = 4.5V and Id = 600mA.
It is available in the X2-DFN1006-3 surface mount package.
Yes, it is fully RoHS compliant and totally lead-free.
The operating junction temperature range is -55°C to 150°C.