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DMN2450UFD-7 DMN2450UFD-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features 20V drain-source voltage, 0.9A continuous drain current, and low on-resistance down to 0.6Ω.
Mfr Part #:

DMN2450UFD-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2450UFD-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features 20V drain-source voltage, 0.9A continuous drain current, and low on-resistance down to 0.6Ω.
✓ Total Stock: 49,020 pcs

DMN2450UFD-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
28,020 pcs
On Request
28020 pcs On Request 1 On Request On Request On Request On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
21,000 pcs
On Request
21000 pcs On Request 1 On Request On Request 24+ On Request On Request
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DMN2450UFD-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN2450UFD-7 Description

Short technical summary and product information.

The DMN2450UFD-7 is an N-Channel enhancement mode MOSFET designed for low on-state resistance and superior switching performance. It is suitable for high efficiency power management applications such as battery operated systems, solid-state relays, and load switches.

 

Key electrical specifications include a drain-source voltage (Vds) of 20V, continuous drain current (Id) of 0.9A at 25°C, and a low gate threshold voltage of 1V maximum. The device offers multiple on-resistance ratings: 0.6Ω at Vgs=4.5V, 0.8Ω at Vgs=2.5V, 1.0Ω at Vgs=1.8V, and 1.6Ω at Vgs=1.5V. It also features ESD protected gate and low input capacitance of 52pF.

 

The MOSFET is housed in a compact X1-DFN1212-3 surface mount package with a weight of 0.005 grams. It is rated for operation from -55°C to 150°C junction temperature. The device is RoHS3 compliant, lead-free, and halogen and antimony free.

DMN2450UFD-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN2450UFD-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN2450UFD-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2450UFD-7 Features

  • N-Channel enhancement mode MOSFET design.
  • 20V drain-source voltage rating.
  • 0.9A continuous drain current capability.
  • Low on-resistance down to 0.6Ω.
  • ESD protected gate for robust operation.

DMN2450UFD-7 Applications

  • Power management functions in portable devices.
  • Battery operated systems and solid-state relays.
  • Load switch applications requiring low resistance.
  • High efficiency DC-DC converter circuits.

DMN2450UFD-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2450UFD-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 0.9A at TA=25°C with VGS=4.5V.

What is the on-resistance at VGS=4.5V?

The typical on-resistance is 0.6Ω at VGS=4.5V and ID=0.9A.

What package does the DMN2450UFD-7 come in?

It comes in a surface mount X1-DFN1212-3 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2450UFD-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at ID=250µA.

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