DistyParts Icon
DMN2450UFB4-7B N-Channel enhancement mode MOSFET from Diodes Incorporated. 20V drain-source voltage, 1A continuous drain current, 400mOhm on-resistance at 4.5V, in X2-DFN1006-3 surface mount package.
Mfr Part #:

DMN2450UFB4-7B

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. 20V drain-source voltage, 1A continuous drain current, 400mOhm on-resistance at 4.5V, in X2-DFN1006-3 surface mount package.
✓ Total Stock: 1,871,020 pcs

DMN2450UFB4-7B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,871,020 pcs
On Request
1871020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2450UFB4-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
View Similar Products (0)

DMN2450UFB4-7B Description

Short technical summary and product information.

The DMN2450UFB4-7B is an N-channel enhancement mode MOSFET designed for low on-state resistance and efficient power management. Key electrical specifications include a drain-source breakdown voltage of 20V, maximum continuous drain current of 1A at 25°C, and a maximum on-resistance of 400mOhm at VGS=4.5V and 600mA.

 

The device features a low gate threshold voltage (max 900mV at 250µA) and fast switching speed, making it suitable for load switch applications. It is ESD protected at the gate. The input capacitance is 56pF at VDS=16V, and total gate charge is 1.3nC.

 

The MOSFET is housed in an ultra-compact X2-DFN1006-3 package with a footprint of just 0.6mm² and a 0.4mm profile, ideal for space-constrained designs. It is surface mountable and RoHS3 compliant, lead-free, and halogen-free. Operating temperature range is -55°C to 150°C.

DMN2450UFB4-7B Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2450UFB4-7B N-Channel MOSFET
Subcategory: Single MOSFET

DMN2450UFB4-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2450UFB4-7B Features

  • N-channel enhancement mode MOSFET with 20V drain-source voltage.
  • Low on-resistance of 400mOhm at 4.5V gate drive.
  • ESD protected gate for improved reliability.
  • Ultra-compact X2-DFN1006-3 package, 0.6mm² footprint.
  • RoHS3 compliant, lead-free and halogen-free.

DMN2450UFB4-7B Applications

  • Ideal for load switch applications.
  • Suitable for high-efficiency power management in portable devices.
  • Used in low-profile electronic designs requiring small footprint.
  • Applicable for battery-powered equipment.

DMN2450UFB4-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2450UFB4-7B?

20V.

What is the package type of the DMN2450UFB4-7B?

X2-DFN1006-3.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMN2450UFB4-7B RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum continuous drain current?

1A at 25°C ambient, 0.8A at 70°C.

What is the on-resistance at 4.5V gate drive?

400mOhm maximum at 600mA.

What is the gate threshold voltage?

900mV maximum at 250µA drain current.

Home
Account

Categories