DMN2400UFB4-7 DMN2400UFB4-7 is a 20V N-Channel enhancement mode MOSFET in a 3-XFDFN surface mount package. It features 750mA continuous drain current and low on-resistance of 550mOhm at 4.5V.
Mfr Part #:

DMN2400UFB4-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2400UFB4-7 is a 20V N-Channel enhancement mode MOSFET in a 3-XFDFN surface mount package. It features 750mA continuous drain current and low on-resistance of 550mOhm at 4.5V.
✓ Total Stock: 90,094 pcs

DMN2400UFB4-7 Available from 1 distributor

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DMN2400UFB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2400UFB4-7 Description

Short technical summary and product information.

The DMN2400UFB4-7 is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for low voltage, low current applications. It offers a continuous drain current of 750mA and a maximum on-resistance of 550mOhm at 4.5V gate drive, ensuring efficient power management in compact designs.

 

This MOSFET features low gate threshold voltage (900mV max), low input capacitance (36pF), and low gate charge (0.5nC), enabling fast switching and reduced power loss. It is ESD protected up to 1.5kV and operates over a temperature range of -55°C to 150°C.

 

The device is housed in an ultra-small 3-XFDFN (X2-DFN1006-3) surface mount package with a maximum height of 0.4mm, making it ideal for space-constrained portable electronics. It is fully RoHS compliant, halogen-free, and MSL Level 1.

 

Note: Per the manufacturer, this part is not recommended for new designs. The suggested replacement is DMN2450UFB4.

DMN2400UFB4-7 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: DMN2400UFB4-7
Subcategory: N-Channel MOSFET

DMN2400UFB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2400UFB4-7 Features

  • Low on-resistance of 550 milliohms.
  • Low gate threshold voltage of 900 millivolts.
  • Low input capacitance of 36 picofarads.
  • ESD protected to 1.5 kilovolts.
  • RoHS compliant and halogen-free design.

DMN2400UFB4-7 Applications

  • Ideal for portable electronic devices.
  • Used in battery management circuits.
  • Suitable for load switching applications.
  • Designed for low voltage DC-DC converters.

DMN2400UFB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of DMN2400UFB4-7?

The drain-source voltage (Vdss) is 20 V.

What is the package type for DMN2400UFB4-7?

The package is 3-XFDFN (X2-DFN1006-3), surface mount.

What is the operating temperature range of DMN2400UFB4-7?

The operating temperature range is -55°C to 150°C (junction).

Is DMN2400UFB4-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum continuous drain current?

The continuous drain current (Id) is 750 mA (Ta).

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 900 mV at Id=250µA.

Is there a recommended replacement for DMN2400UFB4-7?

Yes, the datasheet recommends DMN2450UFB4 as a replacement as this part is not recommended for new designs.

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