| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
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The DMN2400UFB-7 from Diodes Incorporated is an N-channel enhancement mode MOSFET designed for efficient power management in portable and battery-powered applications. With a drain-source voltage rating of 20V and a maximum continuous drain current of 750mA at 25°C, this device offers low on-resistance of 550 mΩ at 4.5V gate drive, minimizing conduction losses.
The MOSFET features a low gate threshold voltage of 900 mV (max), enabling operation at logic-level gate drives of 1.8V and 4.5V. Its low input capacitance of 36 pF and gate charge of 0.5 nC support fast switching speeds, making it suitable for DC-DC converters and power management functions.
The DMN2400UFB-7 is housed in an ultra-small X1-DFN1006-3 surface-mount package with NiPdAu over copper leadframe termination. It is qualified to AEC-Q101 standards for high reliability, lead-free, RoHS compliant, and halogen and antimony free. ESD protection up to 1.5 kV enhances robustness in manufacturing and handling.
20 V.
0.75 A at Vgs = 4.5 V and Ta = 25°C.
550 mOhm maximum at Id = 600 mA, Vgs = 4.5 V.
X1-DFN1006-3 surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is totally lead-free and fully RoHS compliant (RoHS3).
Level 1 (Unlimited) per J-STD-020.