DMN2400UFB-7 N-Channel enhancement mode MOSFET rated for 20V drain-source voltage, 750mA continuous drain current, and 550 mΩ on-resistance at 4.5V drive.
Mfr Part #:

DMN2400UFB-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 20V drain-source voltage, 750mA continuous drain current, and 550 mΩ on-resistance at 4.5V drive.
✓ Total Stock: 64,216 pcs

DMN2400UFB-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
61,020 pcs
61020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,196 pcs
3196 pcs On Request 1 On Request On Request On Request On Request On Request

DMN2400UFB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Features
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2400UFB-7 Description

Short technical summary and product information.

The DMN2400UFB-7 from Diodes Incorporated is an N-channel enhancement mode MOSFET designed for efficient power management in portable and battery-powered applications. With a drain-source voltage rating of 20V and a maximum continuous drain current of 750mA at 25°C, this device offers low on-resistance of 550 mΩ at 4.5V gate drive, minimizing conduction losses.

 

The MOSFET features a low gate threshold voltage of 900 mV (max), enabling operation at logic-level gate drives of 1.8V and 4.5V. Its low input capacitance of 36 pF and gate charge of 0.5 nC support fast switching speeds, making it suitable for DC-DC converters and power management functions.

 

The DMN2400UFB-7 is housed in an ultra-small X1-DFN1006-3 surface-mount package with NiPdAu over copper leadframe termination. It is qualified to AEC-Q101 standards for high reliability, lead-free, RoHS compliant, and halogen and antimony free. ESD protection up to 1.5 kV enhances robustness in manufacturing and handling.

DMN2400UFB-7 Quick Information

Product Type: N-Channel Enhancement Mode MOSFET
Canonical Name: DMN2400UFB-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel

DMN2400UFB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2400UFB-7 Features

  • N-Channel enhancement mode MOSFET design.
  • 20V drain-source voltage rating.
  • 750mA continuous drain current capability.
  • Low on-resistance 550 mΩ at 4.5V drive.
  • Ultra-small X1-DFN1006-3 surface mount package.

DMN2400UFB-7 Applications

  • Used in battery charging circuits.
  • Ideal for power management functions.
  • Suited for DC-DC converter designs.
  • Employed in portable power adaptors.

DMN2400UFB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for DMN2400UFB-7?

20 V.

What is the maximum continuous drain current?

0.75 A at Vgs = 4.5 V and Ta = 25°C.

What is the on-resistance at 4.5V gate drive?

550 mOhm maximum at Id = 600 mA, Vgs = 4.5 V.

What package is the DMN2400UFB-7 available in?

X1-DFN1006-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMN2400UFB-7 RoHS compliant?

Yes, it is totally lead-free and fully RoHS compliant (RoHS3).

What is the moisture sensitivity level?

Level 1 (Unlimited) per J-STD-020.

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