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DMN2310U-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source voltage, 1.6A continuous drain current, and low on-resistance of 175mOhm at 4.5V.
Mfr Part #:

DMN2310U-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source voltage, 1.6A continuous drain current, and low on-resistance of 175mOhm at 4.5V.
✓ Total Stock: 58,020 pcs

DMN2310U-7 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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58,020 pcs
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DMN2310U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN2310U-7 Description

Short technical summary and product information.

The DMN2310U-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for high efficiency power management applications with low on-state resistance and fast switching performance.

 

Key electrical specifications include a drain-source voltage (BVDSS) of 20V, continuous drain current of 1.6A at 25°C (1.2A at 85°C), and pulsed drain current of 4.8A. The device offers low gate threshold voltage (max 950mV at 250µA) and is available with drive voltages of 1.8V and 4.5V. On-resistance is 175mOhm max at Vgs=4.5V, 240mOhm at Vgs=2.5V, and 360mOhm at Vgs=1.8V.

 

The MOSFET features low input capacitance (38pF at Vds=10V) and low gate charge (0.7nC at Vgs=4.5V), enabling efficient switching. It is housed in a surface-mount SOT-23-3 package with matte tin annealed over copper leadframe termination. The device is RoHS3 compliant, halogen and antimony free, and has a moisture sensitivity level of 1.

 

Typical applications include load switches and power management circuits where low voltage and low on-resistance are required. The operating temperature range is -55°C to 150°C, with maximum power dissipation of 480mW at 25°C ambient.

DMN2310U-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2310U-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single

DMN2310U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2310U-7 Features

  • N-channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • Low on-resistance of 175mOhm.
  • Surface mount SOT-23-3 package.
  • RoHS3 compliant and lead-free.

DMN2310U-7 Applications

  • Load switch applications.
  • Power management circuits.
  • High efficiency switching.
  • Battery powered devices.

DMN2310U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What package is the DMN2310U-7 available in?

SOT-23-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN2310U-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the gate threshold voltage?

Maximum 950mV at 250µA drain current.

What is the maximum drain current?

1.6A continuous at 25°C ambient.

What is the on-resistance at 4.5V gate drive?

175mOhm maximum at 300mA.

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