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DMN2300UFL4-7 DMN2300UFL4-7 is a 20V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It offers a maximum continuous drain current of 2.11A and on-resistance as low as 195mΩ.
Mfr Part #:

DMN2300UFL4-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2300UFL4-7 is a 20V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It offers a maximum continuous drain current of 2.11A and on-resistance as low as 195mΩ.
Total Stock: 188 pcs

DMN2300UFL4-7 Available from 1 distributor

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188 pcs
188 pcs On Request 1 On Request On Request 17+ On Request On Request

DMN2300UFL4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Case Material
Configuration
Continuous Drain Current (Maximum @ TA = +85 °C, Note 6)
Current
Drain to Source Voltage (Vdss)
Drain-Source On-State Resistance (Maximum @ VGS = -1.8 V)
Drain-Source On-State Resistance (Maximum @ VGS = 1.5 V)
Drain-Source On-State Resistance (Maximum @ VGS = 2.5 V)
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA=25 °C, Note 5)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Terminals Finish
Termination Style
Thermal Resistance, Junction to Ambient (Maximum @ Note 5)
Thermal Resistance, Junction to Ambient (Maximum @ Note 6)
Vgs(th) (Max) @ Id

DMN2300UFL4-7 Description

Short technical summary and product information.

The DMN2300UFL4-7 is a 20V dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.11A at +25°C (Note 6). The on-resistance is specified at 195mΩ maximum at VGS = 4.5V with ID = 300mA, with additional ratings at lower gate voltages (260mΩ at 2.5V, 380mΩ at 1.8V, 520mΩ at 1.5V).

 

The gate threshold voltage is 950mV maximum at ID = 250µA, and the total gate charge is 3.2nC at VGS = 4.5V. Input capacitance is 128.6pF at VDS = 25V. The device is ESD protected and offers fast switching speed. Maximum power dissipation is 1.39W (Note 6) and 0.53W (Note 5), with an operating junction temperature range of -55°C to +150°C.

 

The MOSFET is housed in a surface-mount X2-DFN1310-6 package (case), which features a footprint of just 1.3mm² and an ultra-low profile of 0.4mm. The case material is molded plastic, green molding compound, with NiPdAu annealed over copper leadframe terminals. Thermal resistance from junction to ambient is 238°C/W (Note 5) and 90°C/W (Note 6). The part is supplied on 7-inch reels with 8mm tape, 3000 units per reel.

DMN2300UFL4-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN2300UFL4-7 20V Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN2300UFL4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2300UFL4-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • Maximum drain-source voltage of 20 V.
  • Continuous drain current of 2.11 A at 25°C.
  • Low on-resistance of 195 mΩ at 4.5 V gate drive.
  • ESD protected gate for robust operation.

DMN2300UFL4-7 Applications

  • Ideal for load switch applications in portable devices.
  • Suitable for power management in battery-powered systems.
  • Use in space-constrained designs with small package footprint.

DMN2300UFL4-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2300UFL4-7?

The maximum drain-source voltage (Vdss) is 20 V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 2.11 A maximum at TA = +25°C (Note 6).

What is the on-resistance of the DMN2300UFL4-7?

The maximum on-resistance is 195 mΩ at VGS = 4.5V and ID = 300mA. It is also specified as 260 mΩ at VGS = 2.5V, 380 mΩ at VGS = 1.8V, and 520 mΩ at VGS = 1.5V.

What is the package type of the DMN2300UFL4-7?

The device is housed in an X2-DFN1310-6 surface-mount package with exposed pad.

What is the operating temperature range of this component?

The operating junction temperature range is -55°C to +150°C.

What is the RoHS status of the DMN2300UFL4-7?

The device is marked as RoHS3 Compliant (unverified) and is also described as Totally Lead-Free and fully RoHS compliant in the datasheet.

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