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DMN2300UFD-7 20V N-Channel enhancement mode MOSFET from Diodes Incorporated. Features low on-resistance of 200mΩ at 4.5V and supports up to 1.73A continuous drain current.
Mfr Part #:

DMN2300UFD-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
20V N-Channel enhancement mode MOSFET from Diodes Incorporated. Features low on-resistance of 200mΩ at 4.5V and supports up to 1.73A continuous drain current.
✓ Total Stock: 3,000 pcs

DMN2300UFD-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2300UFD-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN2300UFD-7 Description

Short technical summary and product information.

The DMN2300UFD-7 is a 20V N-Channel enhancement mode MOSFET by Diodes Incorporated, designed for low on-state resistance and high switching performance. It is ideal for power management applications such as load switches.

 

Key electrical specifications include a maximum drain-source voltage of 20V, a continuous drain current of 1.73A (note 4), and a pulsed drain current of 6.0A. The on-resistance ranges from 200mΩ at Vgs=4.5V to 500mΩ at Vgs=1.5V, enabling efficient operation at low gate voltages. The device features a low gate threshold voltage of 950mV, fast switching with a gate charge of 2nC, and an input capacitance of 67.62pF.

 

The MOSFET is housed in a compact 3-UDFN surface mount package (X1-DFN1212-3) with a weight of 0.005g and is supplied in tape and reel (3000 per reel). It is qualified to AEC-Q101 standards for high reliability, lead-free, RoHS compliant, and halogen-free. The operating junction temperature range is -55°C to 150°C.

DMN2300UFD-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2300UFD-7
Subcategory: Single MOSFET

DMN2300UFD-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2300UFD-7 Features

  • 20V drain-source voltage rating.
  • Low on-resistance down to 200mΩ.
  • AEC-Q101 qualified for automotive use.
  • RoHS compliant and halogen-free.
  • Surface mount 3-UDFN package.

DMN2300UFD-7 Applications

  • Used in power management load switches.
  • Suitable for portable device battery protection.
  • Ideal for low-voltage DC-DC converters.

DMN2300UFD-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2300UFD-7?

The DMN2300UFD-7 has a maximum drain-source voltage of 20V.

What package does the DMN2300UFD-7 come in?

It is available in a 3-UDFN surface mount package (X1-DFN1212-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2300UFD-7 RoHS compliant?

Yes, it is RoHS compliant (RoHS3) and lead-free per the datasheet.

What is the continuous drain current rating?

The maximum continuous drain current is 1.73A at 25°C (note 4) and 1.21A at 25°C (note 5).

Does the DMN2300UFD-7 have ESD protection?

Yes, it has an ESD protected gate rated at 2kV.

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