DMN2300UFB4-7B DMN2300UFB4-7B is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated. It supports 1.3A continuous drain current with 175mΩ maximum on-resistance at 4.5V gate drive.
Mfr Part #:

DMN2300UFB4-7B

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2300UFB4-7B is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated. It supports 1.3A continuous drain current with 175mΩ maximum on-resistance at 4.5V gate drive.
✓ Total Stock: 2,611,686 pcs

DMN2300UFB4-7B Available from 3 distributors

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180,000 pcs
180000 pcs On Request 1 On Request On Request 17+ On Request On Request
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666 pcs
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DMN2300UFB4-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN2300UFB4-7B Description

Short technical summary and product information.

DMN2300UFB4-7B is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum on-resistance of 175mΩ at VGS = 4.5V and supports 1.3A continuous drain current at TA = +25°C (0.96A at +85°C).

 

The device has a low maximum gate threshold voltage of 950mV and a gate drive voltage range from 1.5V to 4.5V, allowing use in low-voltage control circuits. With fast switching speed, ESD protected gate, and a low 0.4mm profile in a 0.6mm² footprint, it is designed for high efficiency power management applications including load switches.

 

The MOSFET is housed in an X2-DFN1006-3 surface mount package with NiPdAu over copper leadframe terminals. It is fully RoHS3 compliant, lead-free, and halogen and antimony free, with moisture sensitivity level 1 and an operating junction temperature range of -55°C to +150°C.

DMN2300UFB4-7B Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2300UFB4-7B 20V N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN2300UFB4-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2300UFB4-7B Features

  • 20V drain-source voltage rating.
  • 1.3A continuous drain current.
  • 175mΩ maximum on-resistance at 4.5V.
  • ESD protected gate for reliability.
  • X2-DFN1006-3 package, 0.4mm profile.

DMN2300UFB4-7B Applications

  • Used as a load switch in electronic circuits.
  • Ideal for high efficiency power management systems.
  • Suits compact low-profile portable electronics.
  • Fits space-constrained PCB designs.

DMN2300UFB4-7B FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

The DMN2300UFB4-7B has a maximum drain-source voltage rating of 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.30A at TA = +25°C with VGS = 4.5V, and 0.96A at TA = +85°C.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance is 175mΩ at VGS = 4.5V with a drain current of 300mA.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is this MOSFET RoHS compliant?

Yes, the DMN2300UFB4-7B is fully RoHS3 compliant and lead-free, with no purposely added lead.

What package is the DMN2300UFB4-7B available in?

It is available in the X2-DFN1006-3 surface mount package.

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