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DMN2300UFB-7B N-Channel enhancement mode MOSFET with 20V drain-source voltage rating and 1.32A continuous drain current.
Mfr Part #:

DMN2300UFB-7B

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage rating and 1.32A continuous drain current.
✓ Total Stock: 21,388 pcs

DMN2300UFB-7B Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
20,000 pcs
On Request
20000 pcs On Request 1 On Request On Request 1221+ On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
1,388 pcs
On Request
1388 pcs On Request 1 On Request On Request 1410 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2300UFB-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN2300UFB-7B Description

Short technical summary and product information.

The DMN2300UFB-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated designed for low on-state resistance and efficient switching. It features a drain-source voltage rating of 20V and a maximum continuous drain current of 1.32A at 25°C ambient. The device offers a low on-resistance of 175mΩ at 4.5V gate drive, making it suitable for load switch and power management applications.

 

This MOSFET is housed in a compact X1-DFN1006-3 surface-mount package with a footprint of just 0.6mm² and a 0.5mm profile, ideal for space-constrained designs. It supports drive voltages of 1.8V and 4.5V, with a maximum gate threshold voltage of 950mV. The device is fully RoHS compliant, halogen and antimony free, and has an MSL rating of Level 1.

 

With a maximum power dissipation of 468mW at steady state and an operating junction temperature range of -55°C to 150°C, the DMN2300UFB-7B is suitable for a wide range of environments. Its fast switching speed and ESD protected gate enhance reliability in portable and low-power applications.

DMN2300UFB-7B Quick Information

Product Type: MOSFET
Canonical Name: DMN2300UFB-7B N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN2300UFB-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2300UFB-7B Features

  • 20V drain-source voltage rating.
  • 1.32A continuous drain current at 25°C.
  • Low on-resistance of 175mΩ at 4.5V.
  • Compact X1-DFN1006-3 surface-mount package.
  • RoHS compliant and halogen free.

DMN2300UFB-7B Applications

  • Ideal for load switch applications.
  • Used in power management circuits.
  • Suitable for portable electronic devices.
  • Designed for low-profile designs.

DMN2300UFB-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2300UFB-7B?

The maximum drain-source voltage is 20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 1.32A at Ta=25°C with VGS=4.5V.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 175mΩ at VGS=4.5V and Id=300mA.

What package does the DMN2300UFB-7B come in?

It is supplied in a 3-UFDFN package (X1-DFN1006-3) for surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2300UFB-7B RoHS compliant?

Yes, it is fully RoHS3 compliant and lead-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 950mV at Id=250µA.

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