DMN2230U-7 The DMN2230U-7 is a 20V, 2A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance and is housed in a SOT23-3 surface mount package.
Mfr Part #:

DMN2230U-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN2230U-7 is a 20V, 2A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance and is housed in a SOT23-3 surface mount package.
✓ Total Stock: 3,793 pcs

DMN2230U-7 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,165 pcs
3165 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
528 pcs
528 pcs On Request 1 On Request On Request On Request On Request On Request
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100 pcs
100 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2230U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2230U-7 Description

Short technical summary and product information.

The DMN2230U-7 is an N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. It offers a maximum drain-source voltage of 20V and continuous drain current of 2A at 25°C ambient. The device features low on-resistance: 110mΩ at VGS=4.5V, 145mΩ at VGS=2.5V, and 230mΩ at VGS=1.8V, enabling efficient operation at low gate drive voltages. The gate threshold voltage is typically 1V at 250µA. Input capacitance is 188pF at VDS=10V, contributing to fast switching speeds. The MOSFET is housed in a SOT23-3 surface mount package with matte tin annealed over copper leadframe termination. It is RoHS3 compliant, lead-free, and halogen and antimony free. The device is qualified to JEDEC standards for high reliability. Operating temperature range is -55°C to 150°C. Maximum power dissipation is 600mW at 25°C ambient. The DMN2230U-7 is suitable for load switching, DC-DC converters, and other low power applications.

DMN2230U-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2230U-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel MOSFET

DMN2230U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2230U-7 Features

  • Low on-resistance: 110mΩ at 4.5V.
  • Supports 1.8V logic-level gate drive.
  • Surface mount SOT23-3 package.
  • RoHS3 compliant and lead-free.
  • Operating temperature -55°C to 150°C.

DMN2230U-7 Applications

  • Ideal for load switching applications.
  • Used in DC-DC converter circuits.
  • Suitable for battery management systems.
  • Perfect for portable electronics.

DMN2230U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What is the continuous drain current rating?

2A at 25°C ambient.

What is the on-resistance at 4.5V gate drive?

110mΩ maximum.

What package is the DMN2230U-7 available in?

SOT23-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C.

Is the device RoHS compliant?

Yes, RoHS3 compliant.

What is the gate threshold voltage?

1V maximum at 250µA.

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