| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,165 pcs
|
3165 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
528 pcs
|
528 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN2230U-7 is an N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. It offers a maximum drain-source voltage of 20V and continuous drain current of 2A at 25°C ambient. The device features low on-resistance: 110mΩ at VGS=4.5V, 145mΩ at VGS=2.5V, and 230mΩ at VGS=1.8V, enabling efficient operation at low gate drive voltages. The gate threshold voltage is typically 1V at 250µA. Input capacitance is 188pF at VDS=10V, contributing to fast switching speeds. The MOSFET is housed in a SOT23-3 surface mount package with matte tin annealed over copper leadframe termination. It is RoHS3 compliant, lead-free, and halogen and antimony free. The device is qualified to JEDEC standards for high reliability. Operating temperature range is -55°C to 150°C. Maximum power dissipation is 600mW at 25°C ambient. The DMN2230U-7 is suitable for load switching, DC-DC converters, and other low power applications.
20V.
2A at 25°C ambient.
110mΩ maximum.
SOT23-3 surface mount package.
-55°C to 150°C.
Yes, RoHS3 compliant.
1V maximum at 250µA.