DMN2215UDM-7 The DMN2215UDM-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 2A drain current, and low on-resistance in a compact SOT-26 package.
Mfr Part #:

DMN2215UDM-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN2215UDM-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 2A drain current, and low on-resistance in a compact SOT-26 package.
✓ Total Stock: 16,800 pcs

DMN2215UDM-7 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,800 pcs
11800 pcs On Request 1 On Request On Request 18+ On Request On Request
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5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2215UDM-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN2215UDM-7 Description

Short technical summary and product information.

The DMN2215UDM-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low-voltage switching applications, offering a drain-source voltage of 20V and a continuous drain current of 2A at 25°C. The device features low on-resistance, with a maximum of 100mΩ at VGS = 4.5V and ID = 2.5A, and 140mΩ at VGS = 2.5V and ID = 1.5A, making it suitable for efficient power management.

 

The MOSFET has a logic-level gate, allowing it to be driven directly from low-voltage logic circuits. It features a very low gate threshold voltage (maximum 1V at ID = 250µA) and low input capacitance (188pF at VDS = 10V), enabling fast switching speeds. The device is ESD protected to 2kV HBM, enhancing robustness in handling and operation.

 

The DMN2215UDM-7 is housed in a surface-mount SOT-26 package (also known as SOT-23-6), with a matte tin annealed finish over a copper leadframe. It is rated for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 650mW at 25°C. The package is designed for compact PCB layouts, making it ideal for space-constrained applications.

DMN2215UDM-7 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN2215UDM-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2215UDM-7 Features

  • Dual N-channel MOSFET in SOT-26 package.
  • Low on-resistance: 100mΩ at 4.5V.
  • Logic-level gate for low-voltage drive.
  • ESD protected gate to 2kV HBM.
  • Totally lead-free and RoHS compliant.

DMN2215UDM-7 Applications

  • Ideal for low-voltage load switching.
  • Used in battery-powered portable devices.
  • Suitable for power management circuits.
  • Perfect for logic-level driven applications.

DMN2215UDM-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2215UDM-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 2A at TA = +25°C.

What is the on-resistance at VGS = 4.5V?

The maximum on-resistance is 100mΩ at VGS = 4.5V and ID = 2.5A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2215UDM-7 RoHS compliant?

Yes, the datasheet states it is totally lead-free and fully RoHS compliant.

What is the package type of the DMN2215UDM-7?

The package is SOT-26 (also known as SOT-23-6), a surface-mount package.

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