Mfr Part #:

DMN21D2UFB-7B

20V N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 760mA continuous drain current, low on-resistance down to 0.99Ω, and ultra-small X1-DFN1006-3 package.

✓ Total Stock: 10,000 pcs

DMN21D2UFB-7B Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	1711+	On Request	On Request

DMN21D2UFB-7B Description

Short technical summary and product information.

The DMN21D2UFB-7B is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low on-state resistance and superior switching performance, making it suitable for high efficiency power management applications. Key electrical specifications include a maximum drain current of 760mA at 25°C ambient, a maximum drain-source voltage of 20V, and a low on-resistance of 0.99Ω at Vgs=4.5V and Id=100mA. The device also offers very low gate threshold voltage (1V max) and low input capacitance (27.6pF at Vds=16V).

The MOSFET is housed in an ultra-small surface mount package, the X1-DFN1006-3 (3-UFDFN), measuring 1mm x 0.6mm with a low profile of 0.5mm maximum height. The package is RoHS compliant, halogen-free, and has a moisture sensitivity level of 1. The device features an ESD protected gate and is qualified to JEDEC standards for high reliability.

Typical applications include general purpose interfacing switches, power management functions, and analog switches. The low gate charge (0.93nC) enables fast switching speeds. The device is supplied in tape and reel packaging with 10,000 units per reel.

DMN21D2UFB-7B Quick Information

Product Type: N-Channel MOSFET

Canonical Name: DMN21D2UFB-7B - 20V N-Channel MOSFET, 760mA, 3-UFDFN Package

Subcategory: Single MOSFET

DMN21D2UFB-7B Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 per J-STD-020

REACH Status: REACH Unaffected

Lead Free: No purposely added lead. Fully RoHS compliant.

DMN21D2UFB-7B Features

20V drain-source voltage rating.
760mA continuous drain current at 25°C.
Low on-resistance: 0.99Ω at 4.5V.
Ultra-small X1-DFN1006-3 package.
RoHS compliant and halogen-free.

DMN21D2UFB-7B Applications

General purpose interfacing switch.
Power management functions.
Analog switch applications.
High efficiency power management.

DMN21D2UFB-7B FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

20V.

What is the continuous drain current?

760mA at 25°C ambient.

What is the on-resistance?

0.99Ω max at Vgs=4.5V, Id=100mA.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

3-UFDFN (X1-DFN1006-3).

Is this device RoHS compliant?

Yes, fully RoHS compliant.

What is the gate threshold voltage?

1V max at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	760 mA (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.93 nC @ 10 V
Halogen Free	Halogen- and Antimony-free 'Green' Device (<900ppm Br, <900ppm Cl, <1500ppm total Br+Cl, <1000ppm Sb)
Input Capacitance (Ciss) (Max) @ Vds	27.6 pF @ 16 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	380 mW (Ta)
Rds On (Max) @ Id, Vgs	990 mOhm
Supplier Device Package	X1-DFN1006-3
Tape Width	8mm
Technology	MOSFET (Metal Oxide)
Termination Finish	NiPdAu over Copper leadframe
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA
Weight	0.001 grams (Approximate)