DMN2170U-7 N-Channel MOSFET with 20V drain-source voltage, 2.3A continuous drain current, and low on-resistance down to 70mΩ. Surface mount in SOT-23-3 package.
Mfr Part #:

DMN2170U-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 20V drain-source voltage, 2.3A continuous drain current, and low on-resistance down to 70mΩ. Surface mount in SOT-23-3 package.
✓ Total Stock: 15,000 pcs

DMN2170U-7 Available from 1 distributor

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✓ Non-Authorised
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15,000 pcs
15000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2170U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2170U-7 Description

Short technical summary and product information.

The DMN2170U-7 is a low threshold N-Channel enhancement mode MOSFET designed for low on-resistance and fast switching. Key specifications include a maximum drain-source voltage of 20 V, continuous drain current of 2.3 A at 25°C, and a pulsed drain current of 8 A. On-resistance is typically 50 mΩ at VGS = 4.5 V and ID = 3 A, and only 70 mΩ at VGS = 2.5 V. The gate threshold voltage ranges from 0.45 V to 1.0 V, enabling operation at low gate drive voltages.

 

This device features very low input capacitance (217 pF typical) and fast switching speed. ESD protection is rated at 3 kV HBM, and the MOSFET is qualified to AEC-Q101 standards for automotive applications. Total power dissipation is 600 mW with a junction-to-ambient thermal resistance of 208°C/W. The operating junction temperature range is -55°C to 150°C.

 

The DMN2170U-7 is provided in a SOT-23-3 surface mount package (case TO-236-3, SC-59). It is lead, halogen, and antimony free, RoHS compliant (Green), and has an MSL of Level 1 per J-STD-020D. The terminal finish is matte tin annealed over a copper leadframe. This MOSFET is suitable for load switching, battery management, and low voltage DC-DC converter applications.

DMN2170U-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2170U-7 N-Channel MOSFET
Subcategory: N-Channel MOSFET

DMN2170U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2170U-7 Features

  • Low on-resistance: 70mΩ at 4.5V gate drive.
  • Very low gate threshold voltage from 0.45V to 1.0V.
  • ESD protected up to 3kV HBM.
  • AEC-Q101 qualified for automotive applications.
  • Lead, halogen, and antimony free RoHS compliant.

DMN2170U-7 Applications

  • Battery protection and management circuits.
  • Load switching in portable devices.
  • DC-DC converter low-side switching.
  • Signal switching for low voltage logic.

DMN2170U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of DMN2170U-7?

The maximum drain-source voltage (Vdss) is 20 V.

What package does the DMN2170U-7 come in?

It comes in a surface mount SOT-23-3 package (also referred to as TO-236-3 or SC-59).

What is the operating temperature range for the DMN2170U-7?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2170U-7 RoHS compliant?

Yes, the device is RoHS compliant and also lead, halogen, and antimony free (Green).

What is the maximum continuous drain current of DMN2170U-7?

The maximum continuous drain current at TA=25°C is 2.3 A.

What is the on-resistance at 4.5V gate drive?

Typical on-resistance is 50 mΩ and maximum is 70 mΩ at VGS=4.5V and ID=3A.

Is the DMN2170U-7 ESD protected?

Yes, the gate is ESD protected with a minimum HBM rating of 3 kV.

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