| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN2114SN-7 is an N-Channel MOSFET from Diodes Incorporated. It features a drain-source voltage of 20V and a continuous drain current of 1.2A. The device has a maximum on-resistance of 100mOhm at 4.5V gate drive, making it suitable for low-voltage switching applications. It is designed for surface mount assembly in the compact SC-59-3 package (also known as TO-236-3 or SOT-23-3). The MOSFET operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW. Typical applications include load switching, DC-DC converters, and power management in portable electronics.
20V.
SC-59-3 (also TO-236-3, SOT-23-3).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
1.2A (at Ta).
100mOhm maximum at 500mA and 4.5V gate drive.
1.4V maximum at 1mA drain current.