| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN2112SN-7 is an N-Channel enhancement-mode MOSFET designed for low-voltage switching applications. With a drain-source voltage rating of 20V and continuous drain current of 1.2A, it is suitable for battery-powered devices and load switching circuits.
The device offers a maximum on-resistance of 100mOhm at Vgs = 4.5V and Id = 500mA, minimizing conduction losses. The gate threshold voltage is 1.2V max, allowing logic-level drive. Input capacitance is 220pF typical, enabling fast switching.
Packaged in the industry-standard SC-59-3 (SOT-23-3) surface mount package, the DMN2112SN-7 is ideal for space-constrained designs. Operating temperature range is -55°C to 150°C, and maximum power dissipation is 500mW.
20 V.
1.2 A at ambient temperature (Ta).
100 mOhm maximum at Vgs = 4.5 V and Id = 500 mA.
-55°C to 150°C (junction).
SC-59-3 (SOT-23-3) surface mount package.
RoHS3 compliant (unverified).
1.2 V maximum at Id = 1 mA.