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DMN2104L-7 N-Channel enhancement mode MOSFET with 20V drain-source breakdown, 4.3A continuous drain current, and low on-resistance of 53mΩ at 4.5V. Packaged in surface-mount SOT-23-3.
Mfr Part #:

DMN2104L-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source breakdown, 4.3A continuous drain current, and low on-resistance of 53mΩ at 4.5V. Packaged in surface-mount SOT-23-3.
✓ Total Stock: 500 pcs

DMN2104L-7 Available from 1 distributor

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✓ Non-Authorised
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PROSOFT ELECTRONICS ✓
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500 pcs
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500 pcs On Request 1 On Request On Request 24+ On Request On Request
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DMN2104L-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN2104L-7 Description

Short technical summary and product information.

The DMN2104L-7 is an N-channel enhancement mode MOSFET designed for low-voltage switching applications. It features a drain-source voltage of 20V and continuous drain current of 4.3A at 25°C ambient. The device offers low on-resistance of 53mΩ maximum at VGS=4.5V and 104mΩ maximum at VGS=2.5V, enabling efficient power management.

 

Key electrical characteristics include a low gate threshold voltage of 1.4V maximum, low input capacitance of 325pF typical, and fast switching speed. The MOSFET is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is also lead, halogen, and antimony free, and RoHS compliant.

 

The device is housed in a surface-mount SOT-23-3 package with typical weight of 0.008g. The package is molded with green compound and has matte tin finish over copper leadframe for solderability. Moisture sensitivity level is 1 per J-STD-020D, providing unlimited shelf life in normal conditions.

DMN2104L-7 Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: DMN2104L-7 N-Channel MOSFET 20V 4.3A SOT-23-3
Subcategory: Single MOSFET

DMN2104L-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead, Halogen and Antimony Free

DMN2104L-7 Features

  • Low on-resistance of 53mΩ at 4.5V gate drive.
  • Drain-source voltage rating of 20V.
  • Continuous drain current of 4.3A at 25°C.
  • SOT-23-3 surface mount package.
  • AEC-Q101 qualified for automotive use.

DMN2104L-7 Applications

  • Ideal for low-voltage load switching applications.
  • Used in DC-DC converter circuits.
  • Suitable for power management in portable devices.
  • Applicable in automotive electronic modules.

DMN2104L-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2104L-7?

The drain-source voltage (Vdss) is 20V minimum.

What package is the DMN2104L-7 available in?

The device is offered in a surface-mount SOT-23-3 package (TO-236-3, SC-59).

What is the operating temperature range of the DMN2104L-7?

The operating junction temperature range is -55°C to +150°C.

Is the DMN2104L-7 RoHS compliant?

Yes, the DMN2104L-7 is RoHS compliant, lead, halogen, and antimony free.

What is the on-resistance of the DMN2104L-7?

Maximum on-resistance is 53mΩ at VGS=4.5V, ID=4.2A, and 104mΩ at VGS=2.5V, ID=3.1A.

Is the DMN2104L-7 qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

What is the gate threshold voltage of the DMN2104L-7?

Maximum gate threshold voltage is 1.4V at VDS=VGS, ID=250µA.

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