DMN2100UDM-7 N-Channel enhancement mode MOSFET with 20V drain-source voltage and 4.0A continuous drain current. Features low on-resistance down to 55mΩ at 4.5V gate drive.
Mfr Part #:

DMN2100UDM-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage and 4.0A continuous drain current. Features low on-resistance down to 55mΩ at 4.5V gate drive.
✓ Total Stock: 12,500 pcs

DMN2100UDM-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,500 pcs
12500 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2100UDM-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2100UDM-7 Description

Short technical summary and product information.

The DMN2100UDM-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high efficiency power management. It features a maximum drain-source voltage of 20V and a continuous drain current of 4.0A at VGS=4.5V and 25°C. On-resistance is specified at multiple gate voltages: 55mΩ at 4.5V, 70mΩ at 2.5V, 90mΩ at 1.8V, and 130mΩ at 1.5V, enabling low-voltage drive. The device has a low gate threshold voltage of 1V max and input capacitance of 555pF at Vds=10V. It includes ESD protected gate for robust operation.

 

The MOSFET is qualified to AEC-Q101 standards for high reliability and is fully RoHS3 compliant, halogen and antimony free. It is packaged in a surface mount SOT-26 (SOT-23-6) case with matte tin terminals. Thermal resistance junction-to-ambient is 127°C/W steady state. The operating junction temperature range is -55°C to 150°C.

 

Typical applications include general purpose interfacing switches and power management functions. The device is supplied on tape and reel with 3000 pieces per reel.

DMN2100UDM-7 Quick Information

Product Type: N-Channel Enhancement Mode MOSFET
Canonical Name: DMN2100UDM-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

DMN2100UDM-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2100UDM-7 Features

  • Low on-resistance of 55mΩ at 4.5V.
  • ESD protected gate for robust operation.
  • AEC-Q101 qualified for automotive use.
  • RoHS3 compliant and halogen free.
  • Surface mount SOT-26 package.

DMN2100UDM-7 Applications

  • General purpose interfacing switch.
  • Power management functions.
  • High efficiency power management.
  • Suitable for automotive electronics.

DMN2100UDM-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2100UDM-7?

The maximum drain-source voltage is 20V.

What package is the DMN2100UDM-7 available in?

It is available in a surface mount SOT-26 (SOT-23-6) package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the DMN2100UDM-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free.

What is the maximum drain current?

The maximum continuous drain current is 4.0A at VGS=4.5V and 25°C.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 55mΩ at VGS=4.5V.

Is the device AEC-Q101 qualified?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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