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DMN2080UCB4-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source voltage, 3A continuous drain current, and low on-resistance of 56mOhm.
Mfr Part #:

DMN2080UCB4-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source voltage, 3A continuous drain current, and low on-resistance of 56mOhm.
✓ Total Stock: 757,020 pcs

DMN2080UCB4-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Optech Co.,Limited ✓
Non-Authorised Inventory information
757,020 pcs
On Request
757020 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN2080UCB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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DMN2080UCB4-7 Description

Short technical summary and product information.

The DMN2080UCB4-7 is an N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 3A at 25°C (4A with Note 6 conditions). The device offers a low typical on-resistance of 43mOhm at VGS=4.5V, minimizing conduction losses. It is built with trench-MOS technology and includes a built-in gate-source protection diode against ESD up to 2kV HBM. The MOSFET is housed in a compact X2-WLB0606-4 surface mount package (datasheet also references X2-WLB0808-4 Type B), with a low profile of 0.35mm, making it suitable for space-constrained applications. It is totally lead-free, halogen and antimony free, and RoHS compliant. Typical applications include DC-DC converters, battery management, and load switches.

DMN2080UCB4-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN2080UCB4-7 N-Channel MOSFET, 20V, 3A
Subcategory: Single MOSFET

DMN2080UCB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2080UCB4-7 Features

  • N-Channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 3A continuous drain current.
  • Low on-resistance of 56mOhm.
  • Built-in ESD protection diode.

DMN2080UCB4-7 Applications

  • Used in DC-DC converter circuits.
  • Ideal for battery management systems.
  • Suitable for load switch applications.

DMN2080UCB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What is the package type?

X2-WLB0606-4 (surface mount).

What is the operating temperature range?

-55°C to 150°C.

Is this device RoHS compliant?

Yes, the datasheet states it is totally lead-free and fully RoHS compliant.

What is the maximum drain current?

3A at 25°C (4A with Note 6 conditions).

What is the on-resistance?

Maximum 56mOhm at VGS=4.5V, typical 43mOhm.

What is the gate threshold voltage?

Maximum 1V at ID=250µA, typical 0.7V.

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