| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | 1538+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The DMN2075UDW-7 is an N-channel enhancement mode MOSFET designed for low on-state resistance and high switching performance. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.8A at 25°C (steady state). The device offers a maximum Rds(on) of 48mOhm at Vgs=4.5V and 59mOhm at Vgs=2.5V. Gate charge is 7nC maximum at 4.5V, and input capacitance is 594.3pF at Vds=10V. The MOSFET is suitable for DC-DC converters and power management functions. It is housed in a surface-mount SOT-363 package (also known as 6-TSSOP, SC-88) with a molded plastic case rated UL 94V-0. The device is RoHS3 compliant, lead-free by design, and green. Operating temperature range is -55°C to 150°C. Maximum power dissipation is 500mW at 25°C steady state. The part is supplied in tape and reel packaging with 3000 units per reel.
20V maximum.
SOT-363 (also 6-TSSOP, SC-88).
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
2.8A at 25°C (steady state, VGS=4.5V).
48mOhm maximum at Vgs=4.5V, Id=3A.
7nC maximum at Vgs=4.5V.