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DMN2065UWQ-7 DMN2065UWQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 3.1A continuous drain current, and low on-resistance down to 56mΩ.
Mfr Part #:

DMN2065UWQ-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2065UWQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage, 3.1A continuous drain current, and low on-resistance down to 56mΩ.
✓ Total Stock: 81,648 pcs

DMN2065UWQ-7 Available from 3 distributors

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50,000 pcs
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1,648 pcs
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DMN2065UWQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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DMN2065UWQ-7 Description

Short technical summary and product information.

The DMN2065UWQ-7 is a 20V N-Channel enhancement mode MOSFET designed for high-efficiency power management applications. It offers low on-state resistance (RDS(on)) of 56mΩ maximum at VGS=4.5V and ID=2.8A, with a continuous drain current rating of 2.8A at 25°C (steady state) and up to 3.1A for short durations (t<10s). The device supports gate drive voltages from 1.5V to 4.5V, enabling operation in low-voltage logic-level circuits.

 

This MOSFET is housed in a surface-mount SOT-323 package (also known as SC-70) and is supplied in tape and reel packaging with 3000 pieces per reel. It is fully RoHS3 compliant, halogen and antimony free, and qualified for automotive applications (AEC-Q101). The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 700mW.

 

Typical applications include general-purpose interfacing switches, power management functions, and DC-DC converters. The device features low input capacitance (400pF at VDS=10V) and fast switching speed, making it suitable for compact, high-efficiency designs.

DMN2065UWQ-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN2065UWQ-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN2065UWQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 – Unlimited
REACH Status: REACH Unaffected

DMN2065UWQ-7 Features

  • N-Channel enhancement mode MOSFET design.
  • 20V drain-source voltage rating.
  • Low on-resistance of 56mΩ at 4.5V.
  • Supports gate drive from 1.5V to 4.5V.
  • AEC-Q101 qualified for automotive applications.

DMN2065UWQ-7 Applications

  • General purpose interfacing switch circuits.
  • Power management functions in portable devices.
  • DC-DC converter designs.
  • Low-voltage logic-level switching applications.

DMN2065UWQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2065UWQ-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 2.8A at VGS=4.5V and TA=+25°C (steady state).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 56mΩ at VGS=4.5V and ID=2.8A, 65mΩ at VGS=2.5V, 93mΩ at VGS=1.8V, and 140mΩ at VGS=1.5V.

What package does the DMN2065UWQ-7 come in?

It comes in a SOT-323 (SC-70) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2065UWQ-7 RoHS compliant?

Yes, it is fully RoHS3 compliant (EU Directive 2011/65/EU and 2015/863/EU).

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at ID=250µA.

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