DMN2058U-7 N-channel MOSFET, 20V Vds, 4.6A Id, 35mOhm Rds(on), SOT23-3 package. Ideal for power management.
Mfr Part #:

DMN2058U-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel MOSFET, 20V Vds, 4.6A Id, 35mOhm Rds(on), SOT23-3 package. Ideal for power management.
✓ Total Stock: 433,020 pcs

DMN2058U-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
223,020 pcs
223020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
210,000 pcs
210000 pcs On Request 1 On Request On Request 19+ On Request On Request

DMN2058U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2058U-7 Description

Short technical summary and product information.

The DMN2058U-7 from Diodes Incorporated is a 20V N-channel enhancement mode MOSFET designed for high-efficiency power management. It features low on-state resistance to minimize conduction losses while maintaining fast switching performance.

 

Key electrical characteristics include a maximum drain-source voltage of 20V, continuous drain current of 4.6A at 25°C ambient (3.7A at 70°C), and pulsed drain current of 24A. The drain-source on-resistance is 35mOhm max at Vgs=10V and 40mOhm max at Vgs=4.5V. Gate threshold voltage is 1.2V max at 250µA. The device has low input capacitance (281pF) and low gate charge (7.7nC), enabling efficient switching.

 

Typical applications include battery charging circuits, DC-DC converters, portable power adaptors, and general power management functions. The MOSFET is fully RoHS compliant, halogen-free, and moisture sensitivity level 1 per J-STD-020.

 

The device is housed in a compact SOT23-3 surface mount package with matte tin terminals. It is available in tape and reel packaging with 3000 pieces per reel. Operating temperature range is -55°C to 150°C junction temperature.

DMN2058U-7 Quick Information

Product Type: MOSFET
Canonical Name: Diodes Inc DMN2058U-7 20V N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN2058U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2058U-7 Features

  • Low on-resistance at 35 mOhm typical.
  • 20V drain-source voltage rating.
  • 4.6A continuous drain current.
  • SOT23-3 surface mount package.
  • RoHS compliant and halogen-free.

DMN2058U-7 Applications

  • Battery charging circuits.
  • DC-DC converter applications.
  • Portable power adaptor designs.
  • General power management functions.

DMN2058U-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What is the package type?

SOT23-3 (also TO-236-3 and SC-59).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain-source on-resistance?

35 mOhm at Vgs=10V, Id=4.6A; 40 mOhm at Vgs=4.5V, Id=4.3A.

What is the gate threshold voltage?

Maximum 1.2V at drain current of 250 µA.

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